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Product Overview
The Infineon 2ED2108S06FXUMA1 is a high-voltage, high-speed power MOSFET and IGBT gate driver with integrated bootstrap diode. It is designed for driving N-channel power switches in half-bridge configurations. The device features a 600V absolute maximum bootstrap voltage and 0.8A typical sink/source current capability. Housed in a compact PG-DSO-8-53 package, it is ideal for space-constrained applications requiring robust isolation and high noise immunity.
Detailed Technical Specifications
| Parameter |
Value |
| Supply Voltage (VCC) |
10V - 20V |
| Bootstrap Voltage (VB) |
Up to 600V |
| Output Current (IO+/-) |
0.8A (typ) |
| Propagation Delay |
160ns (typ) |
| Rise/Fall Time |
30ns / 20ns (typ) |
| Operating Temperature |
-40°C to 125°C |
| Package |
PG-DSO-8-53 |
Key Features
- 600V high-voltage rating for robust operation
- Integrated bootstrap diode reduces external component count
- 0.8A typical gate drive current for fast switching
- Under-voltage lockout (UVLO) for both VCC and VB
- Matched propagation delays for both channels
- Shutdown input for fault protection
- RoHS compliant and halogen-free
Target Applications
- 5G base station power supplies
- Server and telecom SMPS
- Motor drives for industrial automation
- Solar inverters and UPS systems
- Automotive DC-DC converters (e.g., 48V mild hybrid systems)
- LED lighting drivers
Global Supply Chain & Wholesale Solutions
At Jasin Chip, we provide professional supply chain and wholesale solutions for
2ED2108S06FXUMA1. Our core advantages include:
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24/7 Global Customer Support: Professional team providing instant
quotes and technical support worldwide.
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In-stock Inventory, Same-day Shipping: We maintain localized stock;
orders confirmed before 4 PM are shipped the same day.
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Shenzhen with support for HK bank transfers and multi-currency.
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transactions, ensuring peace of mind for batch orders.
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BOM Kitting & Sampling Services: Specialized sourcing for
testing samples and urgent shortage components.
Quality Assurance & Compliance
Jasin Chip guarantees that all delivered products are 100% original factory stock
with full quality assurance and traceability.
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100% Original & Authentic: All components are guaranteed to
be authentic with strict quality control.
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RoHS Compliant: All electronic components comply with international
environmental and safety standards.
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Original Factory Packaging: We maintain original factory packaging
and seals to ensure ESD protection and physical integrity.
產品概述
英飛凌 2ED2108S06FXUMA1 是一款高壓、高速功率 MOSFET 和 IGBT 柵極驅動器,內置自舉二極管。它專為驅動半橋配置中的 N 溝道功率開關而設計。該器件具有 600V 絕對最大自舉電壓和 0.8A 典型灌/拉電流能力。採用緊湊的 PG-DSO-8-53 封裝,非常適合需要強大隔離和高噪聲抗擾度的空間受限應用。
詳細技術參數
| 參數 |
數值 |
| 電源電壓 (VCC) |
10V - 20V |
| 自舉電壓 (VB) |
最高 600V |
| 輸出電流 (IO+/-) |
0.8A (典型值) |
| 傳播延遲 |
160ns (典型值) |
| 上升/下降時間 |
30ns / 20ns (典型值) |
| 工作溫度 |
-40°C 至 125°C |
| 封裝 |
PG-DSO-8-53 |
核心特性
- 600V 高壓額定值,確保穩健運行
- 集成自舉二極管,減少外部元件數量
- 0.8A 典型柵極驅動電流,實現快速開關
- VCC 和 VB 欠壓鎖定 (UVLO)
- 兩通道匹配傳播延遲
- 關斷輸入,用於故障保護
- 符合 RoHS 標準,無滷素
典型應用場景
- 5G 基站電源
- 服務器和電信 SMPS
- 工業自動化電機驅動
- 太陽能逆變器和 UPS 系統
- 汽車 DC-DC 轉換器(例如 48V 輕度混合動力系統)
- LED 照明驅動器
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