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The 2ED2109S06FXUMA1 is a high-voltage, high-speed power MOSFET and IGBT gate driver from Infineon, designed for half-bridge and full-bridge configurations. It features a 600V bootstrap diode and independent high-side and low-side outputs with 0.7A source/sink capability. The device is housed in a compact PG-DSO-8-53 package, making it suitable for space-constrained applications. It offers UVLO protection for both channels and operates over a wide supply voltage range from 10V to 20V.
| Parameter | Value |
|---|---|
| Supply Voltage (VCC) | 10V - 20V |
| Output Current (Source/Sink) | 0.7A / 0.7A |
| High-Voltage Rail (VB) | Up to 600V |
| Propagation Delay | 125 ns (typical) |
| Rise/Fall Time | 30 ns / 25 ns (typical) |
| UVLO Threshold (VCC) | 8.9V (rising), 8.2V (falling) |
| Operating Temperature | -40°C to +125°C |
| Package | PG-DSO-8-53 |
At Jasin Chip, we provide professional supply chain and wholesale solutions for 2ED2109S06FXUMA1. Our core advantages include:
Jasin Chip guarantees that all delivered products are 100% original factory stock with full quality assurance and traceability.
2ED2109S06FXUMA1 是英飛凌推出的一款高壓、高速功率 MOSFET 和 IGBT 柵極驅動器,專為半橋和全橋配置設計。它集成了 600V 自舉二極管,具有獨立的高側和低側輸出,提供 0.7A 的源/灌電流能力。器件採用緊湊的 PG-DSO-8-53 封裝,適合空間受限的應用。它為兩個通道提供欠壓鎖定保護,並在 10V 至 20V 的寬電源電壓範圍內工作。
| 參數 | 數值 |
|---|---|
| 電源電壓 (VCC) | 10V - 20V |
| 輸出電流 (源/灌) | 0.7A / 0.7A |
| 高壓軌 (VB) | 最高 600V |
| 傳播延遲 | 125 ns (典型值) |
| 上升/下降時間 | 30 ns / 25 ns (典型值) |
| UVLO 閾值 (VCC) | 8.9V (上升), 8.2V (下降) |
| 工作溫度 | -40°C 至 +125°C |
| 封裝 | PG-DSO-8-53 |
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