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The 2ED21814S06JXUMA1 is a high-voltage, high-speed power MOSFET and IGBT gate driver from Infineon, designed for half-bridge and full-bridge configurations. It features a 600V bootstrap diode integrated, enabling efficient driving of N-channel MOSFETs or IGBTs in the high-side configuration. The device is housed in a compact PG-DSO-14 package, making it suitable for space-constrained applications. With a typical source/sink current of 2.5A, it provides robust gate drive capability for medium-power switching applications.
| Parameter | Value |
|---|---|
| Supply Voltage (VCC) | 10V - 20V |
| Output Current (Source/Sink) | 2.5A / 2.5A |
| High-Side Floating Supply Voltage | Up to 600V |
| Propagation Delay | 160ns (typical) |
| Rise/Fall Time | 30ns / 20ns (typical) |
| Operating Temperature | -40°C to +125°C |
| Package | PG-DSO-14 |
At Jasin Chip, we provide professional supply chain and wholesale solutions for 2ED21814S06JXUMA1. Our core advantages include:
Jasin Chip guarantees that all delivered products are 100% original factory stock with full quality assurance and traceability.
2ED21814S06JXUMA1 是英飛凌推出的一款高壓、高速功率 MOSFET 和 IGBT 柵極驅動器,專為半橋和全橋配置設計。它集成了 600V 自舉二極管,能夠高效驅動高側 N 溝道 MOSFET 或 IGBT。器件採用緊湊的 PG-DSO-14 封裝,適合空間受限的應用。典型源/灌電流為 2.5A,為中等功率開關應用提供強大的柵極驅動能力。
| 參數 | 數值 |
|---|---|
| 電源電壓 (VCC) | 10V - 20V |
| 輸出電流 (源/灌) | 2.5A / 2.5A |
| 高側浮動電源電壓 | 最高 600V |
| 傳播延遲 | 160ns (典型) |
| 上升/下降時間 | 30ns / 20ns (典型) |
| 工作溫度 | -40°C 至 +125°C |
| 封裝 | PG-DSO-14 |
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