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全球優質電子元件供應商
推動全球創新
全球優質電子元件供應商
The CDM10VDXTSA1 is a dual N-channel enhancement mode MOSFET from Infineon, housed in a compact SOT-23-6 package. It is designed for low-voltage, high-efficiency switching applications. With a drain-source voltage (VDS) of 20V and continuous drain current (ID) of 1.5A, this device offers low on-resistance (RDS(on)) of typically 0.35Ω at VGS=4.5V. The dual configuration saves board space and simplifies PCB layout for applications requiring two independent MOSFETs.
| Parameter | Value |
|---|---|
| Drain-Source Voltage (VDS) | 20 V |
| Continuous Drain Current (ID) | 1.5 A |
| On-Resistance (RDS(on)) @ VGS=4.5V | 0.35 Ω (typ) |
| Gate Threshold Voltage (VGS(th)) | 0.7 V (min), 1.5 V (max) |
| Input Capacitance (Ciss) | 150 pF (typ) |
| Power Dissipation (PD) | 0.8 W |
| Operating Temperature Range | -55°C to +150°C |
| Package | SOT-23-6 |
At Jasin Chip, we provide professional supply chain and wholesale solutions for CDM10VDXTSA1. Our core advantages include:
Jasin Chip guarantees that all delivered products are 100% original factory stock with full quality assurance and traceability.
CDM10VDXTSA1 是英飛凌推出的雙 N 溝道增強型 MOSFET,採用緊湊的 SOT-23-6 封裝。它專為低電壓、高效率的開關應用而設計。漏源電壓 (VDS) 為 20V,連續漏極電流 (ID) 為 1.5A,在 VGS=4.5V 時典型導通電阻 (RDS(on)) 僅為 0.35Ω。雙 MOSFET 配置節省了電路板空間,並簡化了需要兩個獨立 MOSFET 的應用的 PCB 佈局。
| 參數 | 數值 |
|---|---|
| 漏源電壓 (VDS) | 20 V |
| 連續漏極電流 (ID) | 1.5 A |
| 導通電阻 (RDS(on)) @ VGS=4.5V | 0.35 Ω (典型值) |
| 閾值電壓 (VGS(th)) | 0.7 V (最小值), 1.5 V (最大值) |
| 輸入電容 (Ciss) | 150 pF (典型值) |
| 功耗 (PD) | 0.8 W |
| 工作溫度範圍 | -55°C 至 +150°C |
| 封裝 | SOT-23-6 |
在 Jasin Chip,我們為 CDM10VDXTSA1 提供全面的供應鏈與批發解決方案。 我們的核心優勢包括:
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HONG KONG JASIN SEMICONDUCTOR TECHNOLOGY COMPANY LIMITED
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WhatsApp: +852 5209 9691 | Email: [email protected]
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