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The CY14B101Q2-LHXIT is a 1-Mbit (128K x 8) nonvolatile static random access memory (nvSRAM) from Infineon Technologies. It combines a high-performance SRAM with nonvolatile storage using SONOS (Silicon Oxide Nitride Oxide Silicon) technology. The device operates over a wide voltage range of 2.7V to 3.6V and offers unlimited read and write cycles on the SRAM portion, with a minimum of 1 million store cycles and 20-year data retention. Packaged in a compact 8-pin DFN (5x6mm), it is ideal for applications requiring fast, reliable, and nonvolatile data storage.
| Parameter | Value |
|---|---|
| Density | 1 Mbit (128K x 8) |
| Interface | SPI (Serial Peripheral Interface) |
| Supply Voltage | 2.7V to 3.6V |
| Operating Temperature | -40°C to +85°C |
| Max Clock Frequency | 108 MHz |
| SRAM Access Time | 25 ns |
| Store Cycles | 1,000,000 (min) |
| Data Retention | 20 years |
| Package | 8-DFN (5x6mm) |
At Jasin Chip, we provide professional supply chain and wholesale solutions for CY14B101Q2-LHXIT. Our core advantages include:
Jasin Chip guarantees that all delivered products are 100% original factory stock with full quality assurance and traceability.
CY14B101Q2-LHXIT 是英飛凌科技推出的一款1兆位(128K x 8)非易失性靜態隨機存取存儲器(nvSRAM)。它採用SONOS(矽氧化物氮化物氧化物矽)技術,將高性能SRAM與非易失性存儲相結合。該器件在2.7V至3.6V的寬電壓範圍內工作,SRAM部分支持無限次讀寫循環,並提供至少100萬次存儲循環和20年數據保持能力。採用緊湊的8引腳DFN(5x6mm)封裝,非常適合需要快速、可靠和非易失性數據存儲的應用。
| 參數 | 數值 |
|---|---|
| 密度 | 1 Mbit (128K x 8) |
| 接口 | SPI(串行外設接口) |
| 供電電壓 | 2.7V 至 3.6V |
| 工作溫度 | -40°C 至 +85°C |
| 最大時鐘頻率 | 108 MHz |
| SRAM 訪問時間 | 25 ns |
| 存儲循環次數 | 1,000,000(最小值) |
| 數據保持時間 | 20 年 |
| 封裝 | 8-DFN(5x6mm) |
在 Jasin Chip,我們為 CY14B101Q2-LHXIT 提供全面的供應鏈與批發解決方案。 我們的核心優勢包括:
Jasin Chip 承諾所有出貨產品均為原廠正貨,具備完善的品質保證及產品可追溯性。
以上產品均為原廠正貨,提供 BOM 配單及現貨庫存支援,歡迎查詢。
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Our team provides competitive wholesale pricing for CY14B101Q2-LHXIT.
HONG KONG JASIN SEMICONDUCTOR TECHNOLOGY COMPANY LIMITED
Trusted Partner for Automotive, Industrial, and Hard-to-find Components.
WhatsApp: +852 5209 9691 | Email: [email protected]
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