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The CY14B104NA-ZS20XI is a 4-Mbit (512K x 8) nonvolatile static random access memory (nvSRAM) from Infineon Technologies. It combines a high-performance SRAM core with nonvolatile SONOS storage cells, providing instant nonvolatility without a battery. The device operates from a single 2.7V to 3.6V power supply and features a 45ns access time. Packaged in a 44-pin TSOP-II, it offers a reliable and compact solution for data logging, configuration storage, and other applications requiring fast read/write and data retention.
| Parameter | Value |
|---|---|
| Density | 4 Mbit (512K x 8) |
| Access Time | 45 ns |
| Supply Voltage | 2.7V – 3.6V |
| Operating Temperature | -40°C to +85°C |
| Package | 44-TSOP II (10.2mm x 18.4mm) |
| Interface | Parallel |
| Data Retention | 20 years |
| Endurance | 1,000,000 store cycles |
| RoHS | Compliant |
At Jasin Chip, we provide professional supply chain and wholesale solutions for CY14B104NA-ZS20XI. Our core advantages include:
Jasin Chip guarantees that all delivered products are 100% original factory stock with full quality assurance and traceability.
CY14B104NA-ZS20XI 是英飛凌科技推出的4兆位(512K x 8)非易失性靜態隨機存取存儲器(nvSRAM)。它結合了高性能SRAM內核與非易失性SONOS存儲單元,無需電池即可實現即時非易失性。該器件在2.7V至3.6V單電源下工作,訪問時間為45ns。採用44引腳TSOP-II封裝,為數據記錄、配置存儲及其他需要快速讀寫和數據保留的應用提供了可靠且緊湊的解決方案。
| 參數 | 數值 |
|---|---|
| 密度 | 4 Mbit (512K x 8) |
| 訪問時間 | 45 ns |
| 供電電壓 | 2.7V – 3.6V |
| 工作溫度 | -40°C 至 +85°C |
| 封裝 | 44-TSOP II (10.2mm x 18.4mm) |
| 接口 | 並行 |
| 數據保留 | 20年 |
| 耐久性 | 1,000,000次存儲循環 |
| RoHS | 符合 |
在 Jasin Chip,我們為 CY14B104NA-ZS20XI 提供全面的供應鏈與批發解決方案。 我們的核心優勢包括:
Jasin Chip 承諾所有出貨產品均為原廠正貨,具備完善的品質保證及產品可追溯性。
以上產品均為原廠正貨,提供 BOM 配單及現貨庫存支援,歡迎查詢。
PBM99011/22QSA | FM25V05-G | ICE501LDXTMA1 | CY14B256LA-SP45XI | CY14B101NA-ZS45XI
Our team provides competitive wholesale pricing for CY14B104NA-ZS20XI.
HONG KONG JASIN SEMICONDUCTOR TECHNOLOGY COMPANY LIMITED
Trusted Partner for Automotive, Industrial, and Hard-to-find Components.
WhatsApp: +852 5209 9691 | Email: [email protected]
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