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The Infineon CY7C1061G-10ZXI is a high-performance 1-Mbit (128K x 8) Static Random Access Memory (SRAM) device organized as 131,072 words by 8 bits. It operates with a single 5V power supply and features a fast access time of 10 ns, making it ideal for high-speed cache and buffer applications. The device is housed in a 48-pin TSOP-I package, offering a compact footprint for space-constrained designs. With low standby power and automatic power-down capability, it is suitable for battery-backed systems.
| Parameter | Value |
|---|---|
| Density | 1 Mbit (128K x 8) |
| Access Time | 10 ns |
| Supply Voltage | 5V ± 10% |
| Operating Current | 100 mA (max) |
| Standby Current | 10 mA (max) |
| Package | 48-TSOPI (12 x 20 mm) |
| Temperature Range | -40°C to +85°C |
| Output Enable Access Time | 5 ns |
| Data Retention Voltage | 2V (min) |
At Jasin Chip, we provide professional supply chain and wholesale solutions for CY7C1061G-10ZXI. Our core advantages include:
Jasin Chip guarantees that all delivered products are 100% original factory stock with full quality assurance and traceability.
英飛凌 CY7C1061G-10ZXI 是一款高性能 1-Mbit(128K x 8)靜態隨機存取存儲器(SRAM)器件,組織為 131,072 字 x 8 位。它採用單一 5V 電源供電,具有 10 ns 的快速訪問時間,非常適合高速緩存和緩衝應用。該器件採用 48 引腳 TSOP-I 封裝,為空間受限的設計提供了緊湊的佔位面積。憑藉低待機功耗和自動掉電功能,它適用於電池備份系統。
| 參數 | 數值 |
|---|---|
| 密度 | 1 Mbit (128K x 8) |
| 訪問時間 | 10 ns |
| 電源電壓 | 5V ± 10% |
| 工作電流 | 100 mA(最大) |
| 待機電流 | 10 mA(最大) |
| 封裝 | 48-TSOPI (12 x 20 mm) |
| 溫度範圍 | -40°C 至 +85°C |
| 輸出使能訪問時間 | 5 ns |
| 數據保持電壓 | 2V(最小) |
在 Jasin Chip,我們為 CY7C1061G-10ZXI 提供全面的供應鏈與批發解決方案。 我們的核心優勢包括:
Jasin Chip 承諾所有出貨產品均為原廠正貨,具備完善的品質保證及產品可追溯性。
以上產品均為原廠正貨,提供 BOM 配單及現貨庫存支援,歡迎查詢。
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Our team provides competitive wholesale pricing for CY7C1061G-10ZXI.
HONG KONG JASIN SEMICONDUCTOR TECHNOLOGY COMPANY LIMITED
Trusted Partner for Automotive, Industrial, and Hard-to-find Components.
WhatsApp: +852 5209 9691 | Email: [email protected]
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