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The CY7C1061GN30-10BVXI is a high-performance 16-Mbit (1M x 16) Static Random Access Memory (SRAM) device from Infineon Technologies. It operates at a supply voltage of 3.0V and features a fast access time of 10 ns. The device is housed in a compact 48-ball VFBGA (6x8 mm) package, making it ideal for space-constrained applications requiring high-speed data storage and retrieval. This SRAM is organized as 1,048,576 words by 16 bits, providing a flexible memory solution for various embedded systems.
| Parameter | Value |
|---|---|
| Part Number | CY7C1061GN30-10BVXI |
| Memory Size | 16 Mbit (1M x 16) |
| Supply Voltage | 3.0V ± 10% |
| Access Time | 10 ns |
| Package | 48-VFBGA (6x8 mm) |
| Operating Temperature | -40°C to +85°C |
| Interface | Parallel |
| RoHS | Compliant |
The CY7C1061GN30-10BVXI is suitable for a wide range of applications requiring fast and reliable memory, including:
At Jasin Chip, we provide professional supply chain and wholesale solutions for CY7C1061GN30-10BVXI. Our core advantages include:
Jasin Chip guarantees that all delivered products are 100% original factory stock with full quality assurance and traceability.
CY7C1061GN30-10BVXI 是英飛凌科技推出的一款高性能 16-Mbit(1M x 16)靜態隨機存取存儲器(SRAM)器件。它工作在 3.0V 電源電壓下,具有 10 ns 的快速訪問時間。該器件採用緊湊的 48-ball VFBGA(6x8 mm)封裝,非常適合需要高速數據存儲和檢索的空間受限應用。此 SRAM 組織為 1,048,576 個字,每個字 16 位,為各種嵌入式系統提供靈活的存儲解決方案。
| 參數 | 數值 |
|---|---|
| 型號 | CY7C1061GN30-10BVXI |
| 存儲容量 | 16 Mbit(1M x 16) |
| 電源電壓 | 3.0V ± 10% |
| 訪問時間 | 10 ns |
| 封裝 | 48-VFBGA(6x8 mm) |
| 工作溫度 | -40°C 至 +85°C |
| 接口 | 並行 |
| RoHS | 符合 |
CY7C1061GN30-10BVXI 適用於需要快速可靠存儲的各種應用,包括:
在 Jasin Chip,我們為 CY7C1061GN30-10BVXI 提供全面的供應鏈與批發解決方案。 我們的核心優勢包括:
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以上產品均為原廠正貨,提供 BOM 配單及現貨庫存支援,歡迎查詢。
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Our team provides competitive wholesale pricing for CY7C1061GN30-10BVXI.
HONG KONG JASIN SEMICONDUCTOR TECHNOLOGY COMPANY LIMITED
Trusted Partner for Automotive, Industrial, and Hard-to-find Components.
WhatsApp: +852 5209 9691 | Email: [email protected]
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