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The CY7C1062GE30-10BGXI is a high-performance 16-Mbit (1M x 16) Static Random Access Memory (SRAM) device from Infineon Technologies. It operates at a supply voltage of 2.4V to 3.6V and offers an access time of 10 ns. The device is organized as 1,048,576 words by 16 bits and is housed in a 119-ball PBGA package (14x22 mm). This SRAM is designed for applications requiring high speed and low power consumption, such as networking, telecommunications, and industrial systems.
| Parameter | Value |
|---|---|
| Part Number | CY7C1062GE30-10BGXI |
| Memory Size | 16 Mbit (1M x 16) |
| Access Time | 10 ns |
| Supply Voltage | 2.4V – 3.6V |
| Operating Temperature | -40°C to +85°C |
| Package | 119-PBGA (14x22 mm) |
| Interface | Parallel |
| RoHS | Compliant |
The CY7C1062GE30-10BGXI is ideal for high-speed cache and buffer memory in applications such as:
At Jasin Chip, we provide professional supply chain and wholesale solutions for CY7C1062GE30-10BGXI. Our core advantages include:
Jasin Chip guarantees that all delivered products are 100% original factory stock with full quality assurance and traceability.
CY7C1062GE30-10BGXI 是英飛凌科技的一款高性能16兆位(1M x 16)靜態隨機存取存儲器(SRAM)器件。它工作在2.4V至3.6V的電源電壓下,訪問時間為10 ns。該器件組織為1,048,576字×16位,封裝在119球PBGA封裝(14x22 mm)中。這款SRAM專為需要高速和低功耗的應用而設計,如網絡、電信和工業系統。
| 參數 | 數值 |
|---|---|
| 型號 | CY7C1062GE30-10BGXI |
| 存儲容量 | 16 Mbit (1M x 16) |
| 訪問時間 | 10 ns |
| 電源電壓 | 2.4V – 3.6V |
| 工作溫度 | -40°C 至 +85°C |
| 封裝 | 119-PBGA (14x22 mm) |
| 接口 | 並行 |
| RoHS | 符合 |
CY7C1062GE30-10BGXI 非常適合用於高速緩存和緩衝存儲器,例如:
在 Jasin Chip,我們為 CY7C1062GE30-10BGXI 提供全面的供應鏈與批發解決方案。 我們的核心優勢包括:
Jasin Chip 承諾所有出貨產品均為原廠正貨,具備完善的品質保證及產品可追溯性。
以上產品均為原廠正貨,提供 BOM 配單及現貨庫存支援,歡迎查詢。
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Our team provides competitive wholesale pricing for CY7C1062GE30-10BGXI.
HONG KONG JASIN SEMICONDUCTOR TECHNOLOGY COMPANY LIMITED
Trusted Partner for Automotive, Industrial, and Hard-to-find Components.
WhatsApp: +852 5209 9691 | Email: [email protected]
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