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The CY7C1320KV18-250BZXC is a high-performance 18-Mbit synchronous SRAM from Infineon, organized as 512K words by 36 bits. It operates at 250 MHz with a 2-cycle read latency and features a QDR (Quad Data Rate) architecture, delivering up to 9 Gbps peak bandwidth. The device is housed in a compact 165-ball FBGA package (13x15 mm) and operates from a 1.8V core supply with HSTL I/O. It is designed for networking, telecommunications, and high-speed computing applications requiring low latency and high throughput.
| Parameter | Value |
|---|---|
| Density | 18 Mb |
| Organization | 512K x 36 |
| Frequency | 250 MHz |
| Read Latency | 2 cycles |
| Supply Voltage | 1.8V core, 1.5V/1.8V HSTL I/O |
| Package | 165-FBGA (13x15 mm) |
| Operating Temp | 0°C to +70°C |
| Interface | QDR (Quad Data Rate) |
| Burst Length | 2 words |
| Power Dissipation | 1.5W typical |
At Jasin Chip, we provide professional supply chain and wholesale solutions for CY7C1320KV18-250BZXC. Our core advantages include:
Jasin Chip guarantees that all delivered products are 100% original factory stock with full quality assurance and traceability.
CY7C1320KV18-250BZXC 是英飛凌推出的高性能 18-Mbit 同步 SRAM,組織為 512K 字 × 36 位。它在 250 MHz 頻率下工作,具有 2 週期讀取延遲,並採用 QDR(四倍數據速率)架構,峰值帶寬高達 9 Gbps。該器件採用緊湊的 165 球 FBGA 封裝(13x15 mm),核心電源為 1.8V,I/O 為 HSTL。它專為需要低延遲和高吞吐量的網絡、電信和高速計算應用而設計。
| 參數 | 數值 |
|---|---|
| 密度 | 18 Mb |
| 組織 | 512K x 36 |
| 頻率 | 250 MHz |
| 讀取延遲 | 2 週期 |
| 供電電壓 | 核心 1.8V,I/O 1.5V/1.8V HSTL |
| 封裝 | 165-FBGA (13x15 mm) |
| 工作溫度 | 0°C 至 +70°C |
| 接口 | QDR(四倍數據速率) |
| 突發長度 | 2 字 |
| 功耗 | 典型 1.5W |
在 Jasin Chip,我們為 CY7C1320KV18-250BZXC 提供全面的供應鏈與批發解決方案。 我們的核心優勢包括:
Jasin Chip 承諾所有出貨產品均為原廠正貨,具備完善的品質保證及產品可追溯性。
以上產品均為原廠正貨,提供 BOM 配單及現貨庫存支援,歡迎查詢。
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Our team provides competitive wholesale pricing for CY7C1320KV18-250BZXC.
HONG KONG JASIN SEMICONDUCTOR TECHNOLOGY COMPANY LIMITED
Trusted Partner for Automotive, Industrial, and Hard-to-find Components.
WhatsApp: +852 5209 9691 | Email: [email protected]
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