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The FM25L16B-G is a 16-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories. Unlike EEPROM, the FM25L16B-G performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is transferred to the device. The next bus cycle can commence immediately without requiring data polling. In addition, the product offers substantial write endurance compared with EEPROM. The FM25L16B-G is capable of supporting 10^14 read/write cycles, or 100 million times more write cycles than EEPROM. These capabilities make the FM25L16B-G ideal for applications requiring frequent or rapid writes. Examples include data collection, where the number of write cycles may be critical, and demanding industrial controls where the long write time of EEPROM can cause data loss. The FM25L16B-G provides substantial benefits to users in serial nonvolatile memory applications. The device incorporates a serial peripheral interface (SPI) and operates up to a 20 MHz clock frequency. The memory is organized as 2,048 x 8 bits. The FM25L16B-G is available in an 8-pin SOIC package.
| Parameter | Value |
|---|---|
| Density | 16 Kbit |
| Organization | 2,048 x 8 |
| Interface | SPI |
| Max Clock Frequency | 20 MHz |
| Supply Voltage | 2.7V to 3.6V |
| Operating Temperature | -40°C to +85°C |
| Data Retention | 151 years |
| Endurance | 10^14 cycles |
| Package | 8-SOIC |
At Jasin Chip, we provide professional supply chain and wholesale solutions for FM25L16B-G. Our core advantages include:
Jasin Chip guarantees that all delivered products are 100% original factory stock with full quality assurance and traceability.
FM25L16B-G 是一款採用先進鐵電工藝的16千位非易失性存儲器。鐵電隨機存取存儲器(FRAM)既具有非易失性,又能像RAM一樣進行讀寫操作。它提供151年的可靠數據保持能力,同時消除了EEPROM和其他非易失性存儲器帶來的複雜性、開銷和系統級可靠性問題。與EEPROM不同,FM25L16B-G 以總線速度執行寫操作,無寫入延遲。數據在每個字節傳輸到器件後立即寫入存儲陣列,下一個總線週期可以立即開始,無需數據輪詢。此外,該產品相比EEPROM具有顯著的寫入耐久性。FM25L16B-G 支持10^14次讀寫週期,是EEPROM的1億倍。這些能力使FM25L16B-G 非常適合需要頻繁或快速寫入的應用,例如數據收集(寫入週期數可能至關重要)以及要求苛刻的工業控制(EEPROM的長寫入時間可能導致數據丟失)。FM25L16B-G 為串行非易失性存儲器應用提供了顯著優勢。該器件採用串行外設接口(SPI),最高工作時鐘頻率為20 MHz。存儲器組織為2,048 x 8位。FM25L16B-G 採用8引腳SOIC封裝。
| 參數 | 數值 |
|---|---|
| 密度 | 16 Kbit |
| 組織 | 2,048 x 8 |
| 接口 | SPI |
| 最大時鐘頻率 | 20 MHz |
| 電源電壓 | 2.7V 至 3.6V |
| 工作溫度 | -40°C 至 +85°C |
| 數據保持 | 151年 |
| 耐久性 | 10^14次 |
| 封裝 | 8-SOIC |
在 Jasin Chip,我們為 FM25L16B-G 提供全面的供應鏈與批發解決方案。 我們的核心優勢包括:
Jasin Chip 承諾所有出貨產品均為原廠正貨,具備完善的品質保證及產品可追溯性。
以上產品均為原廠正貨,提供 BOM 配單及現貨庫存支援,歡迎查詢。
S29GL512T10FHI010 | CY62158G30-45BVXI | S26KS512SDPBHB020 | CY14B256PA-SFXI | CY62167EV30LL-45ZXIT
Our team provides competitive wholesale pricing for FM25L16B-G.
HONG KONG JASIN SEMICONDUCTOR TECHNOLOGY COMPANY LIMITED
Trusted Partner for Automotive, Industrial, and Hard-to-find Components.
WhatsApp: +852 5209 9691 | Email: [email protected]
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