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The IR2011STRPBF is a high-voltage, high-speed power MOSFET and IGBT gate driver from Infineon Technologies. It is designed to drive N-channel power MOSFETs and IGBTs in a half-bridge configuration. The device features a floating channel up to 200V, capable of driving two N-channel MOSFETs or IGBTs with independent high and low side reference outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The IR2011STRPBF is offered in an 8-pin SOIC package, making it suitable for space-constrained applications.
| Parameter | Value |
|---|---|
| Supply Voltage (VCC) | 10V - 20V |
| High Side Floating Supply Voltage (VB) | Up to 200V |
| Output Current (Peak) | 1A Source / 1A Sink |
| Propagation Delay (Ton/Toff) | 160ns / 150ns |
| Rise/Fall Time | 60ns / 35ns |
| Operating Temperature | -40°C to 125°C |
| Package | 8-SOIC |
At Jasin Chip, we provide professional supply chain and wholesale solutions for IR2011STRPBF. Our core advantages include:
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IR2011STRPBF 是英飛凌科技推出的一款高壓、高速功率 MOSFET 和 IGBT 柵極驅動器。該器件設計用於驅動半橋配置中的 N 溝道功率 MOSFET 或 IGBT。它具有高達 200V 的浮動通道,能夠通過獨立的高邊和低邊參考輸出驅動兩個 N 溝道 MOSFET 或 IGBT。輸出驅動器採用高脈衝電流緩衝級,旨在最大限度地減少驅動器交叉導通。傳播延遲匹配,簡化了在高頻應用中的使用。IR2011STRPBF 採用 8 引腳 SOIC 封裝,適合空間受限的應用。
| 參數 | 數值 |
|---|---|
| 電源電壓 (VCC) | 10V - 20V |
| 高邊浮動電源電壓 (VB) | 最高 200V |
| 輸出電流 (峰值) | 1A 源極 / 1A 汲極 |
| 傳播延遲 (Ton/Toff) | 160ns / 150ns |
| 上升/下降時間 | 60ns / 35ns |
| 工作溫度 | -40°C 至 125°C |
| 封裝 | 8-SOIC |
在 Jasin Chip,我們為 IR2011STRPBF 提供全面的供應鏈與批發解決方案。 我們的核心優勢包括:
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