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The S29GL01GS11TFIV10 is a 1 Gigabit (128 Mbyte) NOR Flash memory device from Infineon Technologies, designed for high-performance embedded applications. It operates at a voltage range of 2.7V to 3.6V and features a 110 ns access time. The device is housed in a 56-pin TSOP package, offering a compact footprint for space-constrained designs. It supports both parallel and serial interface modes, providing flexibility for various system architectures.
| Parameter | Value |
|---|---|
| Density | 1 Gb (128 M x 8 / 64 M x 16) |
| Supply Voltage | 2.7V – 3.6V |
| Access Time | 110 ns |
| Page Read Time | 25 ns |
| Program Time (typical) | 0.5 ms/word |
| Erase Time (sector) | 0.5 s |
| Endurance | 100,000 program/erase cycles |
| Data Retention | 20 years |
| Operating Temperature | -40°C to +85°C |
| Package | 56-TSOP (14x20mm) |
At Jasin Chip, we provide professional supply chain and wholesale solutions for S29GL01GS11TFIV10. Our core advantages include:
Jasin Chip guarantees that all delivered products are 100% original factory stock with full quality assurance and traceability.
S29GL01GS11TFIV10 是英飛凌科技推出的一款 1 Gigabit(128 Mbyte)NOR 閃存器件,專為高性能嵌入式應用設計。其工作電壓範圍為 2.7V 至 3.6V,訪問時間為 110 ns。器件採用 56 引腳 TSOP 封裝,為空間受限的設計提供了緊湊的解決方案。它支持並行和串行接口模式,為各種系統架構提供了靈活性。
| 參數 | 數值 |
|---|---|
| 密度 | 1 Gb (128 M x 8 / 64 M x 16) |
| 供電電壓 | 2.7V – 3.6V |
| 訪問時間 | 110 ns |
| 頁面讀取時間 | 25 ns |
| 編程時間(典型) | 0.5 ms/字 |
| 擦除時間(扇區) | 0.5 s |
| 耐久性 | 100,000 次編程/擦除循環 |
| 數據保持 | 20 年 |
| 工作溫度 | -40°C 至 +85°C |
| 封裝 | 56-TSOP (14x20mm) |
在 Jasin Chip,我們為 S29GL01GS11TFIV10 提供全面的供應鏈與批發解決方案。 我們的核心優勢包括:
Jasin Chip 承諾所有出貨產品均為原廠正貨,具備完善的品質保證及產品可追溯性。
以上產品均為原廠正貨,提供 BOM 配單及現貨庫存支援,歡迎查詢。
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Our team provides competitive wholesale pricing for S29GL01GS11TFIV10.
HONG KONG JASIN SEMICONDUCTOR TECHNOLOGY COMPANY LIMITED
Trusted Partner for Automotive, Industrial, and Hard-to-find Components.
WhatsApp: +852 5209 9691 | Email: [email protected]
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