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The S29GL01GT10DHI020 is a 1 Gb (128 MB) parallel NOR Flash memory from Infineon's GL-T family, designed for high-performance embedded systems. It operates at a voltage range of 2.7V to 3.6V and features a 100 ns access time. Packaged in a compact 64-ball FBGA (9x9 mm), it offers high density and reliability for code storage and data logging applications.
| Parameter | Value |
|---|---|
| Density | 1 Gb (128 MB) |
| Organization | 64M x 16 / 128M x 8 |
| Voltage Range | 2.7V – 3.6V |
| Access Time | 100 ns |
| Page Size | 16 words (32 bytes) |
| Sector Size | 128 Kbytes |
| Program Time | Typ. 0.6 ms per word |
| Erase Time | Typ. 0.6 s per sector |
| Endurance | 100,000 program/erase cycles |
| Data Retention | 20 years |
| Operating Temperature | -40°C to +85°C |
| Package | 64-ball FBGA (9x9 mm) |
At Jasin Chip, we provide professional supply chain and wholesale solutions for S29GL01GT10DHI020. Our core advantages include:
Jasin Chip guarantees that all delivered products are 100% original factory stock with full quality assurance and traceability.
S29GL01GT10DHI020 是英飛凌 GL-T 系列的一款 1 Gb(128 MB)並行 NOR Flash 存儲器,專為高性能嵌入式系統設計。工作電壓範圍為 2.7V 至 3.6V,訪問時間為 100 ns。採用緊湊的 64 球 FBGA(9x9 mm)封裝,為代碼存儲和數據記錄應用提供高密度和可靠性。
| 參數 | 數值 |
|---|---|
| 密度 | 1 Gb(128 MB) |
| 組織 | 64M x 16 / 128M x 8 |
| 電壓範圍 | 2.7V – 3.6V |
| 訪問時間 | 100 ns |
| 頁大小 | 16 字(32 字節) |
| 扇區大小 | 128 Kbytes |
| 編程時間 | 典型 0.6 ms 每字 |
| 擦除時間 | 典型 0.6 s 每扇區 |
| 耐久性 | 100,000 次編程/擦除循環 |
| 數據保持 | 20 年 |
| 工作溫度 | -40°C 至 +85°C |
| 封裝 | 64-ball FBGA(9x9 mm) |
在 Jasin Chip,我們為 S29GL01GT10DHI020 提供全面的供應鏈與批發解決方案。 我們的核心優勢包括:
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以上產品均為原廠正貨,提供 BOM 配單及現貨庫存支援,歡迎查詢。
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Our team provides competitive wholesale pricing for S29GL01GT10DHI020.
HONG KONG JASIN SEMICONDUCTOR TECHNOLOGY COMPANY LIMITED
Trusted Partner for Automotive, Industrial, and Hard-to-find Components.
WhatsApp: +852 5209 9691 | Email: [email protected]
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