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The S29GL01GT10FHI023 is a 1 Gb (128 MB) parallel NOR Flash memory from Infineon's GL-T family. It operates at a single 3.0V power supply and features a 100 ns initial access time with page mode for faster read operations. Housed in a compact 64-ball FBGA package (13x11 mm), it is ideal for high-density code and data storage in embedded systems requiring reliable non-volatile memory.
| Parameter | Value |
|---|---|
| Density | 1 Gb (128 MB) |
| Organization | 64M x 16 |
| Supply Voltage | 2.7V – 3.6V |
| Access Time | 100 ns |
| Page Read | 25 ns (per word) |
| Programming Time | 0.5 ms/word typical |
| Erase Time (Sector) | 0.5 s typical |
| Endurance | 100,000 program/erase cycles |
| Data Retention | 20 years |
| Operating Temperature | -40°C to +85°C |
| Package | 64-ball FBGA (13x11 mm) |
At Jasin Chip, we provide professional supply chain and wholesale solutions for S29GL01GT10FHI023. Our core advantages include:
Jasin Chip guarantees that all delivered products are 100% original factory stock with full quality assurance and traceability.
S29GL01GT10FHI023 是英飛凌 GL-T 系列的一款 1 Gb(128 MB)並行 NOR Flash 存儲器。它工作在 3.0V 單電源下,初始訪問時間為 100 ns,並支持頁模式以實現更快的讀取操作。採用緊湊的 64 球 FBGA 封裝(13x11 mm),非常適合需要可靠非易失性存儲的嵌入式系統中的高密度代碼和數據存儲。
| 參數 | 數值 |
|---|---|
| 密度 | 1 Gb(128 MB) |
| 組織 | 64M x 16 |
| 供電電壓 | 2.7V – 3.6V |
| 訪問時間 | 100 ns |
| 頁讀取 | 25 ns(每字) |
| 編程時間 | 典型 0.5 ms/字 |
| 擦除時間(扇區) | 典型 0.5 s |
| 耐久性 | 100,000 次編程/擦除循環 |
| 數據保持 | 20 年 |
| 工作溫度 | -40°C 至 +85°C |
| 封裝 | 64 球 FBGA(13x11 mm) |
在 Jasin Chip,我們為 S29GL01GT10FHI023 提供全面的供應鏈與批發解決方案。 我們的核心優勢包括:
Jasin Chip 承諾所有出貨產品均為原廠正貨,具備完善的品質保證及產品可追溯性。
以上產品均為原廠正貨,提供 BOM 配單及現貨庫存支援,歡迎查詢。
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Our team provides competitive wholesale pricing for S29GL01GT10FHI023.
HONG KONG JASIN SEMICONDUCTOR TECHNOLOGY COMPANY LIMITED
Trusted Partner for Automotive, Industrial, and Hard-to-find Components.
WhatsApp: +852 5209 9691 | Email: [email protected]
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