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全球優質電子元件供應商
The S29GL01GT12TFVV10 is a 1 Gigabit (128 M x 8-bit/64 M x 16-bit) MirrorBit® Eclipse™ NOR Flash memory from Infineon Technologies. It operates at a supply voltage of 2.7V to 3.6V and features a 120 ns access time. Housed in a 56-pin TSOP package, this device offers high-density non-volatile storage with fast read performance, making it ideal for code shadowing, data logging, and firmware storage in embedded systems.
| Parameter | Value |
|---|---|
| Density | 1 Gb (128 M x 8 / 64 M x 16) |
| Supply Voltage | 2.7V – 3.6V |
| Access Time | 120 ns |
| Page Read Size | 16 bytes |
| Program Time (typical) | 0.6 ms per 256-word page |
| Erase Time (typical) | 0.6 s per 64-Kword sector |
| Endurance | 100,000 program/erase cycles |
| Data Retention | 20 years |
| Operating Temperature | -40°C to +85°C |
| Package | 56-pin TSOP (12 x 20 mm) |
At Jasin Chip, we provide professional supply chain and wholesale solutions for S29GL01GT12TFVV10. Our core advantages include:
Jasin Chip guarantees that all delivered products are 100% original factory stock with full quality assurance and traceability.
S29GL01GT12TFVV10 是英飛凌科技推出的 1 Gigabit(128 M x 8 位/64 M x 16 位)MirrorBit® Eclipse™ NOR 閃存。工作電壓範圍為 2.7V 至 3.6V,存取時間為 120 ns。採用 56 引腳 TSOP 封裝,提供高密度非易失性存儲和快速讀取性能,適用於嵌入式系統中的代碼映射、數據記錄和固件存儲。
| 參數 | 數值 |
|---|---|
| 密度 | 1 Gb(128 M x 8 / 64 M x 16) |
| 供電電壓 | 2.7V – 3.6V |
| 存取時間 | 120 ns |
| 頁讀取大小 | 16 字節 |
| 編程時間(典型) | 0.6 ms 每 256 字頁 |
| 擦除時間(典型) | 0.6 s 每 64-Kword 扇區 |
| 耐久性 | 100,000 次編程/擦除循環 |
| 數據保持 | 20 年 |
| 工作溫度 | -40°C 至 +85°C |
| 封裝 | 56 引腳 TSOP(12 x 20 mm) |
在 Jasin Chip,我們為 S29GL01GT12TFVV10 提供全面的供應鏈與批發解決方案。 我們的核心優勢包括:
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Our team provides competitive wholesale pricing for S29GL01GT12TFVV10.
HONG KONG JASIN SEMICONDUCTOR TECHNOLOGY COMPANY LIMITED
Trusted Partner for Automotive, Industrial, and Hard-to-find Components.
WhatsApp: +852 5209 9691 | Email: [email protected]
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