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The L6387ED is a high-voltage gate driver IC manufactured by STMicroelectronics, designed for driving N-channel power MOSFETs and IGBTs in half-bridge configurations. It features a bootstrap architecture with a floating high-side driver capable of operating up to 600V. The device is housed in a compact 8-SOIC package, making it suitable for space-constrained applications. With a typical source/sink current of 400mA, it ensures fast switching and reduced power losses. The L6387ED integrates advanced protection features including undervoltage lockout (UVLO) for both high and low sides, and interlocking logic to prevent cross-conduction.
| Parameter | Value |
|---|---|
| Supply Voltage (VCC) | 10V to 20V |
| High-Side Floating Supply Voltage | Up to 600V |
| Output Source/Sink Current | 400mA / 400mA |
| Switching Frequency | Up to 400kHz |
| Propagation Delay | 150ns (typ) |
| Rise/Fall Time | 50ns / 30ns (typ) |
| Operating Temperature Range | -40°C to +125°C |
| Package | 8-SOIC |
At Jasin Chip, we provide professional supply chain and wholesale solutions for L6387ED. Our core advantages include:
Jasin Chip guarantees that all delivered products are 100% original factory stock with full quality assurance and traceability.
L6387ED 是意法半導體(STMicroelectronics)生產的高壓柵極驅動器 IC,專為驅動半橋配置中的 N 溝道功率 MOSFET 和 IGBT 設計。它採用自舉架構,浮動高側驅動器可承受高達 600V 的電壓。該器件採用緊湊的 8-SOIC 封裝,適合空間受限的應用。典型源/灌電流為 400mA,確保快速開關並降低功率損耗。L6387ED 集成了先進的保護功能,包括高低側欠壓鎖定(UVLO)和互鎖邏輯以防止直通。
| 參數 | 數值 |
|---|---|
| 電源電壓 (VCC) | 10V 至 20V |
| 高側浮動電源電壓 | 高達 600V |
| 輸出源/灌電流 | 400mA / 400mA |
| 開關頻率 | 高達 400kHz |
| 傳播延遲 | 150ns (典型) |
| 上升/下降時間 | 50ns / 30ns (典型) |
| 工作溫度範圍 | -40°C 至 +125°C |
| 封裝 | 8-SOIC |
在 Jasin Chip,我們為 L6387ED 提供全面的供應鏈與批發解決方案。 我們的核心優勢包括:
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