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全球優質電子元件供應商
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全球優質電子元件供應商
The BQ4014YMB-120 is a 4-Mbit (512K x 8) nonvolatile static RAM (NVSRAM) from Texas Instruments. It combines a high-performance SRAM with an internal lithium battery and power-fail control circuitry, ensuring data retention for over 10 years without external power. The device is housed in a 32-pin DIP module (18.42x52.96 mm) and operates with a 120 ns access time. It is ideal for applications requiring reliable nonvolatile storage with fast read/write cycles.
| Parameter | Value |
|---|---|
| Memory Size | 4 Mbit (512K x 8) |
| Access Time | 120 ns |
| Supply Voltage | 4.5V to 5.5V |
| Data Retention | >10 years |
| Package | 32-DIP Module (18.42x52.96 mm) |
| Operating Temperature | 0°C to +70°C |
| Battery Type | Internal Lithium |
At Jasin Chip, we provide professional supply chain and wholesale solutions for BQ4014YMB-120. Our core advantages include:
Jasin Chip guarantees that all delivered products are 100% original factory stock with full quality assurance and traceability.
BQ4014YMB-120 是德州儀器(TI)推出的4兆位(512K x 8)非易失性靜態RAM(NVSRAM)。它結合了高性能SRAM與內部鋰電池及電源失效控制電路,確保在無外部電源情況下數據保存超過10年。器件採用32引腳DIP模塊封裝(18.42x52.96 mm),訪問時間為120 ns。適用於需要可靠非易失性存儲且讀寫速度快的應用。
| 參數 | 數值 |
|---|---|
| 存儲容量 | 4 Mbit (512K x 8) |
| 訪問時間 | 120 ns |
| 供電電壓 | 4.5V 至 5.5V |
| 數據保持時間 | >10年 |
| 封裝 | 32-DIP模塊 (18.42x52.96 mm) |
| 工作溫度 | 0°C 至 +70°C |
| 電池類型 | 內部鋰電池 |
在 Jasin Chip,我們為 BQ4014YMB-120 提供全面的供應鏈與批發解決方案。 我們的核心優勢包括:
Jasin Chip 承諾所有出貨產品均為原廠正貨,具備完善的品質保證及產品可追溯性。
以上產品均為原廠正貨,提供 BOM 配單及現貨庫存支援,歡迎查詢。
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Our team provides competitive wholesale pricing for BQ4014YMB-120.
HONG KONG JASIN SEMICONDUCTOR TECHNOLOGY COMPANY LIMITED
Trusted Partner for Automotive, Industrial, and Hard-to-find Components.
WhatsApp: +852 5209 9691 | Email: [email protected]
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