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The BQ4832YMA-85 is a 512Kb (64K x 8) nonvolatile static RAM (NVSRAM) from Texas Instruments, integrated in a 32-pin DIP module (18.42x42.8mm). It combines a high-performance SRAM with a lithium energy source and power-fail control circuitry, ensuring data retention for over 10 years without external power. The device operates with a single 5V supply and features an access time of 85ns, making it ideal for applications requiring reliable nonvolatile storage with fast read/write cycles.
| Parameter | Value |
|---|---|
| Density | 512Kb (64K x 8) |
| Access Time | 85ns |
| Supply Voltage | 5V ±10% |
| Data Retention | >10 years |
| Package | 32-DIP Module (18.42x42.8mm) |
| Operating Temperature | 0°C to +70°C |
| Battery Type | Lithium coin cell (integrated) |
| Write Cycle Time | 85ns |
| Output Enable Access Time | 35ns |
At Jasin Chip, we provide professional supply chain and wholesale solutions for BQ4832YMA-85. Our core advantages include:
Jasin Chip guarantees that all delivered products are 100% original factory stock with full quality assurance and traceability.
BQ4832YMA-85 是德州儀器(TI)推出的512Kb(64K x 8)非易失性靜態RAM(NVSRAM),封裝在32引腳DIP模組(18.42x42.8mm)中。它結合了高性能SRAM、鋰電池電源和掉電控制電路,可在無外部電源情況下確保數據保存超過10年。該器件採用單一5V電源供電,存取時間為85ns,非常適合需要可靠非易失性存儲且具備快速讀寫週期的應用。
| 參數 | 數值 |
|---|---|
| 容量 | 512Kb (64K x 8) |
| 存取時間 | 85ns |
| 供電電壓 | 5V ±10% |
| 數據保持時間 | >10年 |
| 封裝 | 32-DIP模組 (18.42x42.8mm) |
| 工作溫度 | 0°C 至 +70°C |
| 電池類型 | 鋰紐扣電池(集成) |
| 寫入週期時間 | 85ns |
| 輸出使能存取時間 | 35ns |
在 Jasin Chip,我們為 BQ4832YMA-85 提供全面的供應鏈與批發解決方案。 我們的核心優勢包括:
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Our team provides competitive wholesale pricing for BQ4832YMA-85.
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