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LMG1025QDEETQ1 TI GaN FET Driver | 6-WSON (2x2) | 5V, 7A Peak, 1.5ns Propagation Delay

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STM32F103C8T6NE555PLM358DRESP32-WROOM-32TL431AIDBZRAMS1117-3.3LM7805MAX3232CSEPC817CTPS5430DDAR STM32F103C8T6NE555PLM358DRESP32-WROOM-32TL431AIDBZRAMS1117-3.3LM7805MAX3232CSEPC817CTPS5430DDAR
1N40072N2222IRFZ44NFGA25N120S8050M7(1N4007)SS14TIP122AO3400IKW40N120H3 1N40072N2222IRFZ44NFGA25N120S8050M7(1N4007)SS14TIP122AO3400IKW40N120H3
ATMEGA328P-AUESP8266-12ELM2596S-ADJBC547BIRLZ44NMCP2515-I/STSN65HVD230AD8232L293DTDA7297 ATMEGA328P-AUESP8266-12ELM2596S-ADJBC547BIRLZ44NMCP2515-I/STSN65HVD230AD8232L293DTDA7297
产品描述
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Product Overview

The LMG1025QDEETQ1 is a high-speed, low-side GaN FET driver from Texas Instruments, designed to drive enhancement-mode GaN FETs in high-frequency power conversion applications. Housed in a compact 6-WSON (2x2 mm) package, it delivers 7A peak sink/source current with a typical propagation delay of only 1.5 ns, enabling efficient switching at multi-MHz frequencies. The device operates from a single 5V supply and features a split output for independent turn-on and turn-off control, minimizing switching losses.

Detailed Technical Specifications

Parameter Value
Supply Voltage 4.5V to 5.5V
Peak Output Current 7A (sink/source)
Propagation Delay 1.5 ns (typical)
Rise/Fall Time 0.5 ns / 0.5 ns (typical, 1nF load)
Operating Temperature -40°C to +125°C
Package 6-WSON (2x2 mm)
Logic Input Threshold 1.8V compatible
Undervoltage Lockout 4.0V (typical)

Key Features

  • Ultra-fast 1.5 ns propagation delay for high-frequency operation
  • 7A peak drive current for fast GaN FET switching
  • Split output for independent gate drive control
  • Low 0.5 ns rise/fall time reduces switching losses
  • Compact 6-WSON package saves board space
  • Wide operating temperature range (-40°C to +125°C)
  • 1.8V logic compatible input
  • Undervoltage lockout protection

Target Applications

  • 5G base station power amplifiers (e.g., driving GaN FETs in envelope tracking)
  • Automotive LiDAR systems (e.g., pulsed laser diode drivers)
  • High-frequency DC-DC converters (e.g., 48V to 12V for telecom)
  • Class-D audio amplifiers (e.g., high-efficiency speaker drivers)
  • Wireless power transfer (e.g., resonant converters)

Global Supply Chain & Wholesale Solutions

At Jasin Chip, we provide professional supply chain and wholesale solutions for LMG1025QDEETQ1. Our core advantages include:

  • 24/7 Global Customer Support: Professional team providing instant quotes and technical support worldwide.
  • In-stock Inventory, Same-day Shipping: We maintain localized stock; orders confirmed before 4 PM are shipped the same day.
  • HK-SZ Synergy, Flexible Settlement: Direct global shipping from Shenzhen with support for HK bank transfers and multi-currency.
  • Escrow Secured Transactions: We support Escrow.com for secure transactions, ensuring peace of mind for batch orders.
  • BOM Kitting & Sampling Services: Specialized sourcing for testing samples and urgent shortage components.

Quality Assurance & Compliance

Jasin Chip guarantees that all delivered products are 100% original factory stock with full quality assurance and traceability.

  • 100% Original & Authentic: All components are guaranteed to be authentic with strict quality control.
  • RoHS Compliant: All electronic components comply with international environmental and safety standards.
  • Original Factory Packaging: We maintain original factory packaging and seals to ensure ESD protection and physical integrity.

產品概述

LMG1025QDEETQ1 是德州儀器(TI)推出的一款高速低側 GaN FET 驅動器,專為驅動增強型 GaN FET 而設計,適用於高頻電源轉換應用。該器件採用緊湊的 6-WSON(2x2 mm)封裝,提供 7A 峰值灌電流/拉電流,典型傳播延遲僅 1.5 ns,可在多 MHz 頻率下實現高效開關。它由單一 5V 電源供電,並具有獨立的分離輸出,用於獨立控制導通和關斷,從而降低開關損耗。

詳細技術參數

參數 數值
電源電壓 4.5V 至 5.5V
峰值輸出電流 7A(灌/拉)
傳播延遲 1.5 ns(典型值)
上升/下降時間 0.5 ns / 0.5 ns(典型值,1nF 負載)
工作溫度 -40°C 至 +125°C
封裝 6-WSON(2x2 mm)
邏輯輸入閾值 1.8V 兼容
欠壓鎖定 4.0V(典型值)

核心特性

  • 超快 1.5 ns 傳播延遲,支持高頻操作
  • 7A 峰值驅動電流,實現 GaN FET 快速開關
  • 分離輸出,獨立控制柵極驅動
  • 低至 0.5 ns 的上升/下降時間,降低開關損耗
  • 緊湊的 6-WSON 封裝,節省電路板空間
  • 寬工作溫度範圍(-40°C 至 +125°C)
  • 1.8V 邏輯兼容輸入
  • 欠壓鎖定保護

典型應用場景

  • 5G 基站功率放大器(例如,驅動包絡跟蹤中的 GaN FET)
  • 汽車激光雷達系統(例如,脈衝激光二極管驅動器)
  • 高頻 DC-DC 轉換器(例如,電信用 48V 轉 12V)
  • D 類音頻放大器(例如,高效揚聲器驅動器)
  • 無線電能傳輸(例如,諧振轉換器)

環球供應鏈與批發合作夥伴方案

在 Jasin Chip,我們為 LMG1025QDEETQ1 提供全面的供應鏈與批發解決方案。 我們的核心優勢包括:

  • 全天候環球客戶支援:專業團隊為您提供即時報價及技術支援,無需漫長等待。
  • 現貨庫存,即日發貨:確保現貨充足。下午 4 點前確認訂單,即可安排當天寄出。
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HONG KONG JASIN SEMICONDUCTOR TECHNOLOGY COMPANY LIMITED
Trusted Partner for Automotive, Industrial, and Hard-to-find Components.
WhatsApp: +852 5209 9691 | Email: [email protected]

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