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Product Overview
The LMG2610RRGT is a 650V, 10A gallium nitride (GaN) half-bridge power stage from Texas Instruments. It integrates two GaN FETs with gate drivers and protection features in a compact QFN package, enabling high-frequency, high-efficiency power conversion. This device is ideal for applications requiring high power density and low switching losses.
Detailed Technical Specifications
| Parameter |
Value |
| Drain-Source Voltage (VDS) |
650 V |
| Continuous Drain Current (ID) |
10 A |
| Pulsed Drain Current (IDM) |
20 A |
| On-Resistance (RDS(on)) |
70 mΩ (typical) |
| Switching Frequency |
Up to 2 MHz |
| Operating Temperature Range |
-40°C to +125°C |
| Package |
QFN (40-pin, 6x8 mm) |
Key Features
- Integrated half-bridge GaN power stage with gate drivers
- 650V voltage rating with low on-resistance
- High switching frequency capability up to 2 MHz
- Zero reverse recovery loss
- Integrated bootstrap diode and UVLO protection
- Overcurrent and overtemperature protection
- Compact QFN package for high power density
Target Applications
- 5G base station power supplies (e.g., rectifiers for remote radio units)
- AC-DC adapters and chargers (e.g., 65W USB-C PD chargers)
- Server and telecom power converters (e.g., 48V bus converters)
- Solar inverters (e.g., microinverters for residential solar)
- Industrial motor drives (e.g., servo drives for robotics)
Global Supply Chain & Wholesale Solutions
At Jasin Chip, we provide professional supply chain and wholesale solutions for
LMG2610RRGT. Our core advantages include:
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24/7 Global Customer Support: Professional team providing instant
quotes and technical support worldwide.
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In-stock Inventory, Same-day Shipping: We maintain localized stock;
orders confirmed before 4 PM are shipped the same day.
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Shenzhen with support for HK bank transfers and multi-currency.
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testing samples and urgent shortage components.
Quality Assurance & Compliance
Jasin Chip guarantees that all delivered products are 100% original factory stock
with full quality assurance and traceability.
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be authentic with strict quality control.
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environmental and safety standards.
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Original Factory Packaging: We maintain original factory packaging
and seals to ensure ESD protection and physical integrity.
產品概述
LMG2610RRGT 是德州儀器推出的 650V、10A 氮化鎵 (GaN) 半橋功率級。它將兩個 GaN FET 與柵極驅動器和保護功能集成在緊湊的 QFN 封裝中,實現高頻、高效能電源轉換。此元件非常適合需要高功率密度和低開關損耗的應用。
詳細技術參數
| 參數 |
數值 |
| 漏源電壓 (VDS) |
650 V |
| 連續漏極電流 (ID) |
10 A |
| 脈衝漏極電流 (IDM) |
20 A |
| 導通電阻 (RDS(on)) |
70 mΩ (典型值) |
| 開關頻率 |
最高 2 MHz |
| 工作溫度範圍 |
-40°C 至 +125°C |
| 封裝 |
QFN (40 引腳, 6x8 mm) |
核心特性
- 集成半橋 GaN 功率級與柵極驅動器
- 650V 電壓額定值,低導通電阻
- 高開關頻率能力,最高 2 MHz
- 零反向恢復損耗
- 集成自舉二極管和欠壓鎖定保護
- 過流和過溫保護
- 緊湊 QFN 封裝,實現高功率密度
典型應用場景
- 5G 基站電源(例如,遠程射頻單元的整流器)
- AC-DC 適配器和充電器(例如,65W USB-C PD 充電器)
- 服務器和電信電源轉換器(例如,48V 總線轉換器)
- 太陽能逆變器(例如,家用太陽能微型逆變器)
- 工業電機驅動(例如,機器人伺服驅動器)
環球供應鏈與批發合作夥伴方案
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