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LMG3422R030RQZT TI GaN FET | 54-VQFN (12x12) | 650V, 30mΩ, Integrated Driver

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产品描述
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Product Overview

The LMG3422R030RQZT is a 650V, 30mΩ gallium nitride (GaN) field-effect transistor (FET) with integrated driver and protection, from Texas Instruments. Housed in a compact 54-pin VQFN (12x12) package, it enables high-frequency, high-efficiency power conversion in a small footprint. The device integrates a gate driver, bootstrap diode, and advanced protection features, simplifying design and reducing component count.

Detailed Technical Specifications

Parameter Value
Drain-Source Voltage (VDS) 650 V
Typical On-Resistance (RDS(on)) 30 mΩ
Continuous Drain Current (ID) 10 A (at TC = 25°C)
Pulsed Drain Current (IDM) 20 A
Gate-Source Voltage (VGS) -10 to 10 V
Switching Frequency Up to 2 MHz
Operating Junction Temperature -40°C to +150°C
Package 54-VQFN (12x12)

Key Features

  • Integrated gate driver with bootstrap diode
  • Zero reverse recovery (QRR = 0)
  • Low switching losses with fast slew rate
  • Overcurrent, overtemperature, and undervoltage lockout protection
  • 5V/9V compatible logic input
  • Small 12x12 mm QFN package

Target Applications

  • 5G base station power supplies (e.g., rectifiers for remote radio units)
  • AC/DC adapters for laptops and gaming consoles
  • On-board chargers for electric vehicles (EVs)
  • Server and telecom power converters
  • Industrial motor drives (e.g., servo drives for robotics)

Global Supply Chain & Wholesale Solutions

At Jasin Chip, we provide professional supply chain and wholesale solutions for LMG3422R030RQZT. Our core advantages include:

  • 24/7 Global Customer Support: Professional team providing instant quotes and technical support worldwide.
  • In-stock Inventory, Same-day Shipping: We maintain localized stock; orders confirmed before 4 PM are shipped the same day.
  • HK-SZ Synergy, Flexible Settlement: Direct global shipping from Shenzhen with support for HK bank transfers and multi-currency.
  • Escrow Secured Transactions: We support Escrow.com for secure transactions, ensuring peace of mind for batch orders.
  • BOM Kitting & Sampling Services: Specialized sourcing for testing samples and urgent shortage components.

Quality Assurance & Compliance

Jasin Chip guarantees that all delivered products are 100% original factory stock with full quality assurance and traceability.

  • 100% Original & Authentic: All components are guaranteed to be authentic with strict quality control.
  • RoHS Compliant: All electronic components comply with international environmental and safety standards.
  • Original Factory Packaging: We maintain original factory packaging and seals to ensure ESD protection and physical integrity.

產品概述

LMG3422R030RQZT 是德州儀器(TI)推出的一款 650V、30mΩ 氮化鎵(GaN)場效應晶體管(FET),集成驅動器和保護功能,採用緊湊的 54 引腳 VQFN(12x12)封裝。該器件可在小尺寸內實現高頻、高效率的電源轉換,集成柵極驅動器、自舉二極管和高級保護功能,簡化設計並減少元件數量。

詳細技術參數

參數 數值
漏源電壓(VDS) 650 V
典型導通電阻(RDS(on)) 30 mΩ
連續漏極電流(ID) 10 A(TC = 25°C 時)
脈衝漏極電流(IDM) 20 A
柵源電壓(VGS) -10 至 10 V
開關頻率 最高 2 MHz
工作結溫 -40°C 至 +150°C
封裝 54-VQFN(12x12)

核心特性

  • 集成柵極驅動器和自舉二極管
  • 零反向恢復(QRR = 0)
  • 低開關損耗,快速壓擺率
  • 過流、過溫和欠壓鎖定保護
  • 5V/9V 兼容邏輯輸入
  • 小型 12x12 mm QFN 封裝

典型應用場景

  • 5G 基站電源(例如,遠程射頻單元的整流器)
  • 筆記本電腦和遊戲機的 AC/DC 適配器
  • 電動汽車(EV)車載充電器
  • 服務器和電信電源轉換器
  • 工業電機驅動(例如,機器人伺服驅動器)

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在 Jasin Chip,我們為 LMG3422R030RQZT 提供全面的供應鏈與批發解決方案。 我們的核心優勢包括:

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以上產品均為原廠正貨,提供 BOM 配單及現貨庫存支援,歡迎查詢。

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HONG KONG JASIN SEMICONDUCTOR TECHNOLOGY COMPANY LIMITED
Trusted Partner for Automotive, Industrial, and Hard-to-find Components.
WhatsApp: +852 5209 9691 | Email: [email protected]

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