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Product Overview
The LMG3616REQR is a 650V, 16A gallium nitride (GaN) field-effect transistor (FET) from Texas Instruments, designed for high-efficiency power conversion. Housed in a compact 38-VQFN (8x5.3mm) package, it offers low on-resistance and fast switching speeds, enabling reduced power losses and smaller system size.
Detailed Technical Specifications
| Parameter |
Value |
| Drain-Source Voltage (Vds) |
650 V |
| Continuous Drain Current (Id) |
16 A |
| On-Resistance (Rds(on)) |
50 mΩ (typical) |
| Gate Threshold Voltage (Vgs(th)) |
1.7 V (typical) |
| Switching Frequency |
Up to 2 MHz |
| Package |
38-VQFN (8x5.3mm) |
| Operating Temperature |
-40°C to +150°C |
Key Features
- 650V breakdown voltage enables use in high-voltage applications
- Low Rds(on) minimizes conduction losses
- Fast switching reduces switching losses and enables high-frequency operation
- GaN technology offers superior figure of merit (FOM) compared to Si MOSFETs
- Compact VQFN package saves PCB space
Target Applications
- 5G base station power supplies (e.g., rectifiers for remote radio units)
- Automotive on-board chargers (e.g., 3.3kW OBC for EVs)
- Industrial power adapters (e.g., 300W AC-DC adapters for servers)
- Solar microinverters (e.g., 500W string inverters)
- LED lighting drivers (e.g., 150W street light driver)
Global Supply Chain & Wholesale Solutions
At Jasin Chip, we provide professional supply chain and wholesale solutions for
LMG3616REQR. Our core advantages include:
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24/7 Global Customer Support: Professional team providing instant
quotes and technical support worldwide.
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In-stock Inventory, Same-day Shipping: We maintain localized stock;
orders confirmed before 4 PM are shipped the same day.
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Shenzhen with support for HK bank transfers and multi-currency.
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transactions, ensuring peace of mind for batch orders.
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BOM Kitting & Sampling Services: Specialized sourcing for
testing samples and urgent shortage components.
Quality Assurance & Compliance
Jasin Chip guarantees that all delivered products are 100% original factory stock
with full quality assurance and traceability.
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100% Original & Authentic: All components are guaranteed to
be authentic with strict quality control.
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RoHS Compliant: All electronic components comply with international
environmental and safety standards.
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Original Factory Packaging: We maintain original factory packaging
and seals to ensure ESD protection and physical integrity.
產品概述
LMG3616REQR 是德州儀器(TI)推出的 650V、16A 氮化鎵(GaN)場效應晶體管(FET),專為高效能電源轉換設計。採用緊湊的 38-VQFN(8x5.3mm)封裝,具有低導通電阻和快速開關速度,可降低功率損耗並縮小系統尺寸。
詳細技術參數
| 參數 |
數值 |
| 漏源電壓(Vds) |
650 V |
| 連續漏極電流(Id) |
16 A |
| 導通電阻(Rds(on)) |
50 mΩ(典型值) |
| 閾值電壓(Vgs(th)) |
1.7 V(典型值) |
| 開關頻率 |
最高 2 MHz |
| 封裝 |
38-VQFN(8x5.3mm) |
| 工作溫度 |
-40°C 至 +150°C |
核心特性
- 650V 擊穿電壓,適用於高壓應用
- 低 Rds(on) 降低導通損耗
- 快速開關減少開關損耗,支援高頻操作
- GaN 技術相比 Si MOSFET 具有更優異的品質因數(FOM)
- 緊湊的 VQFN 封裝節省 PCB 空間
典型應用場景
- 5G 基站電源(例如遠端射頻單元的整流器)
- 車載充電器(例如電動汽車 3.3kW OBC)
- 工業電源適配器(例如伺服器 300W AC-DC 適配器)
- 太陽能微型逆變器(例如 500W 組串式逆變器)
- LED 照明驅動器(例如 150W 路燈驅動器)
環球供應鏈與批發合作夥伴方案
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