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Product Overview
The CDM10VDXTSA1 is a dual N-channel enhancement mode MOSFET from Infineon, housed in a compact SOT-23-6 package. It is designed for low-voltage, high-efficiency switching applications. With a drain-source voltage (VDS) of 20V and continuous drain current (ID) of 1.5A, this device offers low on-resistance (RDS(on)) of typically 0.35Ω at VGS=4.5V. The dual configuration saves board space and simplifies PCB layout for applications requiring two independent MOSFETs.
Detailed Technical Specifications
| Parameter |
Value |
| Drain-Source Voltage (VDS) |
20 V |
| Continuous Drain Current (ID) |
1.5 A |
| On-Resistance (RDS(on)) @ VGS=4.5V |
0.35 Ω (typ) |
| Gate Threshold Voltage (VGS(th)) |
0.7 V (min), 1.5 V (max) |
| Input Capacitance (Ciss) |
150 pF (typ) |
| Power Dissipation (PD) |
0.8 W |
| Operating Temperature Range |
-55°C to +150°C |
| Package |
SOT-23-6 |
Key Features
- Dual N-channel MOSFET in one package
- Low on-resistance for high efficiency
- Low gate threshold voltage for 1.8V logic compatibility
- Compact SOT-23-6 package saves PCB space
- RoHS compliant and halogen-free
Target Applications
- Load switches in portable devices (e.g., smartphones, tablets)
- DC-DC converter synchronous rectification
- Battery protection circuits in power banks
- Signal switching in 5G base station control boards
- Automotive infotainment and dashboard power management
Global Supply Chain & Wholesale Solutions
At Jasin Chip, we provide professional supply chain and wholesale solutions for
CDM10VDXTSA1. Our core advantages include:
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24/7 Global Customer Support: Professional team providing instant
quotes and technical support worldwide.
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In-stock Inventory, Same-day Shipping: We maintain localized stock;
orders confirmed before 4 PM are shipped the same day.
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HK-SZ Synergy, Flexible Settlement: Direct global shipping from
Shenzhen with support for HK bank transfers and multi-currency.
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Escrow Secured Transactions: We support Escrow.com for secure
transactions, ensuring peace of mind for batch orders.
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BOM Kitting & Sampling Services: Specialized sourcing for
testing samples and urgent shortage components.
Quality Assurance & Compliance
Jasin Chip guarantees that all delivered products are 100% original factory stock
with full quality assurance and traceability.
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100% Original & Authentic: All components are guaranteed to
be authentic with strict quality control.
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RoHS Compliant: All electronic components comply with international
environmental and safety standards.
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Original Factory Packaging: We maintain original factory packaging
and seals to ensure ESD protection and physical integrity.
產品概述
CDM10VDXTSA1 是英飛凌推出的雙 N 溝道增強型 MOSFET,採用緊湊的 SOT-23-6 封裝。它專為低電壓、高效率的開關應用而設計。漏源電壓 (VDS) 為 20V,連續漏極電流 (ID) 為 1.5A,在 VGS=4.5V 時典型導通電阻 (RDS(on)) 僅為 0.35Ω。雙 MOSFET 配置節省了電路板空間,並簡化了需要兩個獨立 MOSFET 的應用的 PCB 佈局。
詳細技術參數
| 參數 |
數值 |
| 漏源電壓 (VDS) |
20 V |
| 連續漏極電流 (ID) |
1.5 A |
| 導通電阻 (RDS(on)) @ VGS=4.5V |
0.35 Ω (典型值) |
| 閾值電壓 (VGS(th)) |
0.7 V (最小值), 1.5 V (最大值) |
| 輸入電容 (Ciss) |
150 pF (典型值) |
| 功耗 (PD) |
0.8 W |
| 工作溫度範圍 |
-55°C 至 +150°C |
| 封裝 |
SOT-23-6 |
核心特性
- 單一封裝內集成雙 N 溝道 MOSFET
- 低導通電阻,實現高效率
- 低閾值電壓,兼容 1.8V 邏輯
- 緊湊的 SOT-23-6 封裝節省 PCB 空間
- 符合 RoHS 標準且無滷素
典型應用場景
- 便攜設備中的負載開關(例如智能手機、平板電腦)
- DC-DC 轉換器同步整流
- 移動電源中的電池保護電路
- 5G 基站控制板中的信號切換
- 汽車信息娛樂系統和儀表盤電源管理
環球供應鏈與批發合作夥伴方案
在 Jasin Chip,我們為 CDM10VDXTSA1 提供全面的供應鏈與批發解決方案。
我們的核心優勢包括:
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