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Product Overview
The ICE3RBR0665JGXUMA1 is a high-voltage power MOSFET from Infineon's CoolMOS series, designed for efficient power conversion. It features a 650V drain-source breakdown voltage and a low on-resistance of 0.65Ω, enabling high efficiency in switching applications. The device is housed in a PG-DSO-12-19 package, which offers excellent thermal performance and compact footprint.
Detailed Technical Specifications
| Parameter |
Value |
| Drain-Source Voltage (VDS) |
650 V |
| On-Resistance (RDS(on)) |
0.65 Ω |
| Continuous Drain Current (ID) |
6 A |
| Pulse Drain Current (ID,pulse) |
18 A |
| Gate Threshold Voltage (VGS(th)) |
3.5 V |
| Input Capacitance (Ciss) |
680 pF |
| Output Capacitance (Coss) |
45 pF |
| Reverse Transfer Capacitance (Crss) |
5 pF |
| Total Gate Charge (Qg) |
15 nC |
| Operating Junction Temperature |
-55 to +150 °C |
| Package |
PG-DSO-12-19 |
Key Features
- 650V breakdown voltage for robust operation
- Low on-resistance (0.65Ω) for high efficiency
- Fast switching performance with low gate charge
- Enhanced avalanche capability
- RoHS compliant and halogen-free
Target Applications
- Switched-mode power supplies (SMPS) for telecom equipment (e.g., 5G base station power modules)
- AC-DC converters for industrial power supplies
- LED lighting drivers
- Power factor correction (PFC) circuits
- Automotive on-board chargers (e.g., electric vehicle battery chargers)
Global Supply Chain & Wholesale Solutions
At Jasin Chip, we provide professional supply chain and wholesale solutions for
ICE3RBR0665JGXUMA1. Our core advantages include:
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24/7 Global Customer Support: Professional team providing instant
quotes and technical support worldwide.
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In-stock Inventory, Same-day Shipping: We maintain localized stock;
orders confirmed before 4 PM are shipped the same day.
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HK-SZ Synergy, Flexible Settlement: Direct global shipping from
Shenzhen with support for HK bank transfers and multi-currency.
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Escrow Secured Transactions: We support Escrow.com for secure
transactions, ensuring peace of mind for batch orders.
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BOM Kitting & Sampling Services: Specialized sourcing for
testing samples and urgent shortage components.
Quality Assurance & Compliance
Jasin Chip guarantees that all delivered products are 100% original factory stock
with full quality assurance and traceability.
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100% Original & Authentic: All components are guaranteed to
be authentic with strict quality control.
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RoHS Compliant: All electronic components comply with international
environmental and safety standards.
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Original Factory Packaging: We maintain original factory packaging
and seals to ensure ESD protection and physical integrity.
產品概述
ICE3RBR0665JGXUMA1 是英飛凌 CoolMOS 系列的高壓功率 MOSFET,專為高效電源轉換設計。它具有 650V 的漏源擊穿電壓和 0.65Ω 的低導通電阻,可在開關應用中實現高效率。該器件採用 PG-DSO-12-19 封裝,具有出色的熱性能和緊湊的佔位面積。
詳細技術參數
| 參數 |
數值 |
| 漏源電壓 (VDS) |
650 V |
| 導通電阻 (RDS(on)) |
0.65 Ω |
| 連續漏極電流 (ID) |
6 A |
| 脈衝漏極電流 (ID,pulse) |
18 A |
| 柵極閾值電壓 (VGS(th)) |
3.5 V |
| 輸入電容 (Ciss) |
680 pF |
| 輸出電容 (Coss) |
45 pF |
| 反向傳輸電容 (Crss) |
5 pF |
| 總柵極電荷 (Qg) |
15 nC |
| 工作結溫 |
-55 至 +150 °C |
| 封裝 |
PG-DSO-12-19 |
核心特性
- 650V 擊穿電壓,確保穩健運行
- 低導通電阻 (0.65Ω),實現高效率
- 快速開關性能,低柵極電荷
- 增強的雪崩能力
- 符合 RoHS 標準且無滷素
典型應用場景
- 電信設備的開關電源(例如 5G 基站電源模塊)
- 工業電源的 AC-DC 轉換器
- LED 照明驅動器
- 功率因數校正 (PFC) 電路
- 車載充電器(例如電動汽車電池充電器)
環球供應鏈與批發合作夥伴方案
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我們的核心優勢包括:
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全天候環球客戶支援:專業團隊為您提供即時報價及技術支援,無需漫長等待。
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