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Product Overview
The LMG1020YFFR from Texas Instruments is a high-speed, low-side GaN FET driver designed to drive enhancement-mode GaN FETs in high-frequency power conversion applications. Housed in a compact 6-DSBGA package, it delivers 7A peak sink/source current with a typical propagation delay of only 1 ns, enabling efficient switching at frequencies up to 50 MHz. This driver is optimized for use with TI's GaN FETs, providing robust gate drive with minimal overshoot and ringing.
Detailed Technical Specifications
| Parameter |
Value |
| Supply Voltage (VDD) |
4.5V to 5.5V |
| Peak Output Current |
7A (sink/source) |
| Propagation Delay |
1 ns (typical) |
| Rise/Fall Time |
0.5 ns / 0.5 ns (typical) |
| Operating Frequency |
Up to 50 MHz |
| Package |
6-DSBGA (1.5mm x 1.5mm) |
| Operating Temperature |
-40°C to +125°C |
Key Features
- Ultra-fast 1 ns propagation delay for high-frequency switching
- 7A peak gate drive current for fast GaN FET switching
- Low output impedance minimizes gate ringing
- Under-voltage lockout (UVLO) for reliable startup
- Small 6-DSBGA package saves board space
- Compatible with 5V logic inputs
Target Applications
- 5G base station power amplifiers (e.g., driving GaN FETs in envelope tracking)
- High-frequency DC-DC converters for telecom and data center
- LiDAR systems for autonomous vehicles
- Class-D audio amplifiers
- Wireless power transfer systems
Global Supply Chain & Wholesale Solutions
At Jasin Chip, we provide professional supply chain and wholesale solutions for
LMG1020YFFR. Our core advantages include:
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24/7 Global Customer Support: Professional team providing instant
quotes and technical support worldwide.
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In-stock Inventory, Same-day Shipping: We maintain localized stock;
orders confirmed before 4 PM are shipped the same day.
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Shenzhen with support for HK bank transfers and multi-currency.
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transactions, ensuring peace of mind for batch orders.
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BOM Kitting & Sampling Services: Specialized sourcing for
testing samples and urgent shortage components.
Quality Assurance & Compliance
Jasin Chip guarantees that all delivered products are 100% original factory stock
with full quality assurance and traceability.
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100% Original & Authentic: All components are guaranteed to
be authentic with strict quality control.
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RoHS Compliant: All electronic components comply with international
environmental and safety standards.
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Original Factory Packaging: We maintain original factory packaging
and seals to ensure ESD protection and physical integrity.
產品概述
LMG1020YFFR 是德州儀器 (TI) 推出的一款高速低側 GaN FET 驅動器,專為驅動增強型 GaN FET 而設計,適用於高頻電源轉換應用。該器件採用緊湊的 6-DSBGA 封裝,提供 7A 峰值灌電流/拉電流,典型傳播延遲僅為 1 ns,可實現高達 50 MHz 的高效開關。此驅動器針對 TI 的 GaN FET 進行了優化,提供穩健的柵極驅動,並具有最小的過沖和振鈴。
詳細技術參數
| 參數 |
數值 |
| 電源電壓 (VDD) |
4.5V 至 5.5V |
| 峰值輸出電流 |
7A (灌/拉) |
| 傳播延遲 |
1 ns (典型值) |
| 上升/下降時間 |
0.5 ns / 0.5 ns (典型值) |
| 工作頻率 |
高達 50 MHz |
| 封裝 |
6-DSBGA (1.5mm x 1.5mm) |
| 工作溫度 |
-40°C 至 +125°C |
核心特性
- 超快 1 ns 傳播延遲,支持高頻開關
- 7A 峰值柵極驅動電流,實現 GaN FET 快速開關
- 低輸出阻抗,減少柵極振鈴
- 欠壓鎖定 (UVLO) 確保可靠啟動
- 小型 6-DSBGA 封裝節省電路板空間
- 兼容 5V 邏輯輸入
典型應用場景
- 5G 基站功率放大器(例如,驅動包絡跟蹤中的 GaN FET)
- 用於電信和數據中心的高頻 DC-DC 轉換器
- 自動駕駛汽車的 LiDAR 系統
- D 類音頻放大器
- 無線充電系統
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