LMG2100R026VBNR TI GaN FET | 18-VQFN-FCRLF(7X4.5) | 650V, 26mΩ

Product Overview

The LMG2100R026VBNR is a high-performance GaN FET from Texas Instruments, designed for power conversion applications requiring high efficiency and power density. It features a 650V drain-source voltage rating and a typical on-resistance of 26mΩ, enabling low conduction losses. The device is housed in an 18-pin VQFN-FCRLF package measuring 7x4.5mm, offering excellent thermal performance and compact footprint.

Detailed Technical Specifications

Key Features

• 650V GaN FET with ultra-low Rds(on) of 26mΩ
• Zero reverse recovery charge (Qrr=0) for high-frequency operation
• Low gate charge (Qg=6.2nC) enabling fast switching
• Integrated gate driver and protection features
• Compact 7x4.5mm VQFN package with exposed pad for thermal management
• RoHS compliant and halogen-free

Target Applications

• 5G base station power supplies (e.g., rectifier modules for massive MIMO)
• Data center server power units (e.g., 48V to 12V intermediate bus converters)
• Automotive on-board chargers (e.g., 3.3kW OBC for EVs)
• Industrial motor drives (e.g., servo drives for robotics)
• Solar inverters (e.g., microinverters for residential solar)
• USB-C PD adapters (e.g., 65W laptop chargers)

Global Supply Chain & Wholesale Solutions

At Jasin Chip, we provide professional supply chain and wholesale solutions for LMG2100R026VBNR. Our core advantages include:

• 24/7 Global Customer Support: Professional team providing instant quotes and technical support worldwide.
• In-stock Inventory, Same-day Shipping: We maintain localized stock; orders confirmed before 4 PM are shipped the same day.
• HK-SZ Synergy, Flexible Settlement: Direct global shipping from Shenzhen with support for HK bank transfers and multi-currency.
• Escrow Secured Transactions: We support Escrow.com for secure transactions, ensuring peace of mind for batch orders.
• BOM Kitting & Sampling Services: Specialized sourcing for testing samples and urgent shortage components.

Quality Assurance & Compliance

Jasin Chip guarantees that all delivered products are 100% original factory stock with full quality assurance and traceability.

• 100% Original & Authentic: All components are guaranteed to be authentic with strict quality control.
• RoHS Compliant: All electronic components comply with international environmental and safety standards.
• Original Factory Packaging: We maintain original factory packaging and seals to ensure ESD protection and physical integrity.

產品概述

LMG2100R026VBNR 是德州儀器推出的一款高性能 GaN FET，專為需要高效率和高功率密度的電源轉換應用而設計。其漏源電壓額定值為 650V，典型導通電阻為 26mΩ，可實現低導通損耗。該器件採用 18 引腳 VQFN-FCRLF 封裝（7x4.5mm），具有出色的熱性能和緊湊的佔板面積。

詳細技術參數

核心特性

• 650V GaN FET，超低導通電阻 26mΩ
• 零反向恢復電荷（Qrr=0），適合高頻操作
• 低柵電荷（Qg=6.2nC），實現快速開關
• 集成柵極驅動器和保護功能
• 緊湊的 7x4.5mm VQFN 封裝，帶裸露焊盤以改善散熱
• 符合 RoHS 標準且無滷素

典型應用場景

• 5G 基站電源（例如：大規模 MIMO 的整流模塊）
• 數據中心服務器電源（例如：48V 至 12V 中間總線轉換器）
• 車載充電器（例如：3.3kW 電動汽車車載充電器）
• 工業電機驅動（例如：機器人伺服驅動器）
• 太陽能逆變器（例如：家用微型逆變器）
• USB-C PD 適配器（例如：65W 筆記本電腦充電器）

環球供應鏈與批發合作夥伴方案

在 Jasin Chip，我們為 LMG2100R026VBNR 提供全面的供應鏈與批發解決方案。 我們的核心優勢包括：

• 全天候環球客戶支援：專業團隊為您提供即時報價及技術支援，無需漫長等待。
• 現貨庫存，即日發貨：確保現貨充足。下午 4 點前確認訂單，即可安排當天寄出。
• 深港聯動，結算靈活：深圳直發全球，物流高效可靠；支援香港銀行戶口轉賬及多幣種結算。
• Escrow 擔保交易：支援 Escrow.com 平台交易，保障買賣雙方權益，小批量訂單亦可安心在線下單。
• BOM 配單與樣板服務：提供樣板測試及認證支援。專注一站式 BOM 配套及緊急缺料採購服務。

品質保證與合規

Jasin Chip 承諾所有出貨產品均為原廠正貨，具備完善的品質保證及產品可追溯性。

• 100% 原廠正貨：承諾所有供應零件均為原裝現貨，品質嚴格把關，來源清晰可追溯。
• 符合 RoHS 認證：所有電子元器件均符合國際環保標準及相關安全認證。
• 原廠封裝保護：嚴格保留原廠原始包裝及封條，確保物流過程中的靜電防護 (ESD) 與物理安全。

以上產品均為原廠正貨，提供 BOM 配單及現貨庫存支援，歡迎查詢。

HONG KONG JASIN SEMICONDUCTOR TECHNOLOGY COMPANY LIMITED
Trusted Partner for Automotive, Industrial, and Hard-to-find Components.
WhatsApp: +852 5209 9691 | Email: [email protected]