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Product Overview
The LMG3100R044VBER is a 650V, 44mΩ gallium nitride (GaN) field-effect transistor (FET) from Texas Instruments, designed for high-efficiency power conversion. It integrates a GaN power FET with advanced gate driver and protection features in a compact 15-VQFN-FCRLF (6.5x4) package. This device enables high-frequency operation, reducing magnetics size and improving power density.
Detailed Technical Specifications
| Parameter |
Value |
| Drain-Source Voltage (VDS) |
650 V |
| Typical On-Resistance (RDS(on)) |
44 mΩ |
| Continuous Drain Current (ID) |
10 A |
| Pulsed Drain Current (IDM) |
20 A |
| Gate Threshold Voltage (VGS(th)) |
1.7 V |
| Input Capacitance (Ciss) |
150 pF |
| Output Capacitance (Coss) |
30 pF |
| Reverse Transfer Capacitance (Crss) |
5 pF |
| Switching Frequency |
Up to 2 MHz |
| Operating Temperature Range |
-40°C to +125°C |
| Package |
15-VQFN-FCRLF (6.5x4) |
Key Features
- 650V GaN FET with low 44mΩ on-resistance
- Integrated gate driver with bootstrap diode
- Zero reverse recovery loss
- Low gate charge for high-frequency operation
- Overcurrent and overtemperature protection
- Compact 15-VQFN package for space-constrained designs
Target Applications
- 5G base station power supplies (e.g., rectifiers for massive MIMO)
- Automotive onboard chargers (e.g., 3.3kW OBC for EVs)
- Industrial DC-DC converters (e.g., 48V to 12V for telecom)
- High-density AC-DC adapters (e.g., 240W USB-C PD)
- Solar microinverters (e.g., 300W string inverters)
Global Supply Chain & Wholesale Solutions
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LMG3100R044VBER. Our core advantages include:
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with full quality assurance and traceability.
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be authentic with strict quality control.
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environmental and safety standards.
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Original Factory Packaging: We maintain original factory packaging
and seals to ensure ESD protection and physical integrity.
產品概述
LMG3100R044VBER 是德州儀器推出的 650V、44mΩ 氮化鎵場效應晶體管,集成 GaN 功率 FET 與先進柵極驅動器和保護功能,採用緊湊的 15-VQFN-FCRLF(6.5x4)封裝。該器件支持高頻操作,減小磁性元件尺寸,提升功率密度。
詳細技術參數
| 參數 |
數值 |
| 漏源電壓 (VDS) |
650 V |
| 典型導通電阻 (RDS(on)) |
44 mΩ |
| 連續漏極電流 (ID) |
10 A |
| 脈衝漏極電流 (IDM) |
20 A |
| 柵極閾值電壓 (VGS(th)) |
1.7 V |
| 輸入電容 (Ciss) |
150 pF |
| 輸出電容 (Coss) |
30 pF |
| 反向傳輸電容 (Crss) |
5 pF |
| 開關頻率 |
最高 2 MHz |
| 工作溫度範圍 |
-40°C 至 +125°C |
| 封裝 |
15-VQFN-FCRLF(6.5x4) |
核心特性
- 650V GaN FET,低導通電阻 44mΩ
- 集成柵極驅動器及自舉二極管
- 零反向恢復損耗
- 低柵極電荷,支持高頻操作
- 過流和過溫保護
- 緊湊 15-VQFN 封裝,適合空間受限設計
典型應用場景
- 5G 基站電源(如大規模 MIMO 整流器)
- 車載充電器(如電動汽車 3.3kW OBC)
- 工業 DC-DC 轉換器(如電信 48V 轉 12V)
- 高密度 AC-DC 適配器(如 240W USB-C PD)
- 太陽能微型逆變器(如 300W 串式逆變器)
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