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Product Overview
The LMG3522R050RQSR is a 650V, 50mΩ gallium nitride (GaN) field-effect transistor (FET) with integrated driver and protection features from Texas Instruments. Housed in a compact 52-pin VQFN (12mm x 12mm) package, this device enables high-frequency, high-efficiency power conversion in applications such as AC/DC adapters, data center power supplies, and renewable energy inverters. The integrated driver simplifies layout and reduces parasitic inductance, while robust protection features ensure reliable operation.
Detailed Technical Specifications
| Parameter |
Value |
| Drain-Source Voltage (VDS) |
650 V |
| Typical On-Resistance (RDS(on)) |
50 mΩ |
| Continuous Drain Current (ID) |
10 A (at 25°C) |
| Pulsed Drain Current (IDM) |
20 A |
| Gate Threshold Voltage (VGS(th)) |
1.2 V (typical) |
| Switching Frequency |
Up to 2 MHz |
| Operating Junction Temperature |
-40°C to +150°C |
| Package |
52-VQFN (12mm x 12mm) |
Key Features
- 650V GaN FET with integrated gate driver
- Low on-resistance (50 mΩ) for high efficiency
- High switching frequency capability (up to 2 MHz)
- Integrated overcurrent and overtemperature protection
- Zero reverse recovery loss
- Small footprint (12mm x 12mm) for compact designs
Target Applications
- AC/DC adapters and chargers (e.g., 65W USB-C PD adapters)
- Data center power supplies (e.g., 48V to 12V intermediate bus converters)
- Telecom rectifiers (e.g., 5G base station power modules)
- Solar inverters (e.g., microinverters for residential solar)
- Motor drives (e.g., servo drives for industrial automation)
Global Supply Chain & Wholesale Solutions
At Jasin Chip, we provide professional supply chain and wholesale solutions for
LMG3522R050RQSR. Our core advantages include:
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24/7 Global Customer Support: Professional team providing instant
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testing samples and urgent shortage components.
Quality Assurance & Compliance
Jasin Chip guarantees that all delivered products are 100% original factory stock
with full quality assurance and traceability.
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100% Original & Authentic: All components are guaranteed to
be authentic with strict quality control.
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RoHS Compliant: All electronic components comply with international
environmental and safety standards.
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Original Factory Packaging: We maintain original factory packaging
and seals to ensure ESD protection and physical integrity.
產品概述
LMG3522R050RQSR 是德州儀器(TI)推出的一款 650V、50mΩ 氮化鎵(GaN)場效應晶體管(FET),集成驅動器和保護功能。該器件採用緊湊的 52 引腳 VQFN(12mm x 12mm)封裝,適用於高頻、高效率的電源轉換應用,如 AC/DC 適配器、數據中心電源和可再生能源逆變器。集成驅動器簡化了佈局並降低了寄生電感,而強大的保護功能確保了可靠運行。
詳細技術參數
| 參數 |
數值 |
| 漏源電壓(VDS) |
650 V |
| 典型導通電阻(RDS(on)) |
50 mΩ |
| 連續漏極電流(ID) |
10 A(25°C 時) |
| 脈衝漏極電流(IDM) |
20 A |
| 柵極閾值電壓(VGS(th)) |
1.2 V(典型值) |
| 開關頻率 |
最高 2 MHz |
| 工作結溫 |
-40°C 至 +150°C |
| 封裝 |
52-VQFN(12mm x 12mm) |
核心特性
- 650V GaN FET,集成柵極驅動器
- 低導通電阻(50 mΩ),實現高效率
- 高開關頻率能力(最高 2 MHz)
- 集成過流和過溫保護
- 零反向恢復損耗
- 小尺寸(12mm x 12mm),適合緊湊設計
典型應用場景
- AC/DC 適配器和充電器(例如 65W USB-C PD 適配器)
- 數據中心電源(例如 48V 至 12V 中間總線轉換器)
- 電信整流器(例如 5G 基站電源模塊)
- 太陽能逆變器(例如家用微型逆變器)
- 電機驅動(例如工業自動化伺服驅動器)
環球供應鏈與批發合作夥伴方案
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