推動全球創新
全球優質電子元件供應商
推動全球創新
全球優質電子元件供應商
The SN700030N from Texas Instruments is a high-performance N-channel MOSFET designed for efficient power management in demanding applications. With a drain-source voltage (VDS) of 30V and continuous drain current (ID) of 100A, this device offers low on-resistance (RDS(on)) of 2.5mΩ typical at VGS=10V, enabling high efficiency and reduced power losses. The SN700030N is housed in a compact package suitable for space-constrained designs, making it ideal for power conversion, motor control, and load switching.
| Parameter | Value |
|---|---|
| VDS (Drain-Source Voltage) | 30V |
| ID (Continuous Drain Current) | 100A |
| RDS(on) (Typical @ VGS=10V) | 2.5mΩ |
| VGS(th) (Gate Threshold Voltage) | 1.0-2.5V |
| Qg (Total Gate Charge) | 45nC |
| Package | TO-220 |
| Operating Temperature | -55°C to +175°C |
At Jasin Chip, we provide professional supply chain and wholesale solutions for SN700030N. Our core advantages include:
Jasin Chip guarantees that all delivered products are 100% original factory stock with full quality assurance and traceability.
SN700030N 是德州儀器(TI)推出的一款高性能 N 溝道 MOSFET,專為要求嚴苛的電源管理應用而設計。其漏源電壓(VDS)為 30V,連續漏極電流(ID)為 100A,在 VGS=10V 時典型導通電阻(RDS(on))僅 2.5mΩ,可實現高效率並降低功率損耗。該器件採用緊湊封裝,適合空間受限的設計,廣泛應用於電源轉換、馬達控制和負載開關等領域。
| 參數 | 數值 |
|---|---|
| 漏源電壓(VDS) | 30V |
| 連續漏極電流(ID) | 100A |
| 典型導通電阻(VGS=10V) | 2.5mΩ |
| 閾值電壓(VGS(th)) | 1.0-2.5V |
| 總柵極電荷(Qg) | 45nC |
| 封裝 | TO-220 |
| 工作溫度 | -55°C 至 +175°C |
在 Jasin Chip,我們為 SN700030N 提供全面的供應鏈與批發解決方案。 我們的核心優勢包括:
Jasin Chip 承諾所有出貨產品均為原廠正貨,具備完善的品質保證及產品可追溯性。
以上產品均為原廠正貨,提供 BOM 配單及現貨庫存支援,歡迎查詢。
MUX36S08IPWR | CD4051BPWR | SN74LVTH540NS | TMUX7349FPWR | TUSB551RWBR
Our team provides competitive wholesale pricing for SN700030N.
HONG KONG JASIN SEMICONDUCTOR TECHNOLOGY COMPANY LIMITED
Trusted Partner for Automotive, Industrial, and Hard-to-find Components.
WhatsApp: +852 5209 9691 | Email: [email protected]
| 品牌 | 料號 | 封裝 | 年份 | 數量 | 單價 | 操作 |
|---|---|---|---|---|---|---|
|
請在上方輸入料號開始搜尋
|
||||||