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The SN700071N from Texas Instruments is a high-performance N-channel enhancement mode field-effect transistor (FET) designed for low-power switching and amplification applications. It features a drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 0.3A, making it suitable for a variety of general-purpose switching tasks. The device is housed in a small SOT-23 package, offering excellent power dissipation and space-saving benefits for compact designs.
| Parameter | Value |
|---|---|
| Drain-Source Voltage (VDS) | 60 V |
| Gate-Source Voltage (VGS) | ±20 V |
| Continuous Drain Current (ID) | 0.3 A |
| Pulsed Drain Current (IDM) | 1.2 A |
| Power Dissipation (PD) | 0.36 W |
| RDS(on) @ VGS=10V, ID=0.5A | 5 Ω (max) |
| Threshold Voltage (Vth) | 0.8 to 2.5 V |
| Input Capacitance (Ciss) | 50 pF (typ) |
| Operating Temperature Range | -55 to +150 °C |
| Package | SOT-23 |
At Jasin Chip, we provide professional supply chain and wholesale solutions for SN700071N. Our core advantages include:
Jasin Chip guarantees that all delivered products are 100% original factory stock with full quality assurance and traceability.
SN700071N 是德州儀器 (TI) 生產的一款高性能 N 溝道增強型場效應晶體管 (FET),專為低功耗開關和放大應用而設計。其漏源電壓 (VDS) 為 60V,連續漏極電流 (ID) 為 0.3A,適用於各種通用開關任務。該器件採用小型 SOT-23 封裝,具有出色的功耗和節省空間的優勢,適合緊湊型設計。
| 參數 | 數值 |
|---|---|
| 漏源電壓 (VDS) | 60 V |
| 柵源電壓 (VGS) | ±20 V |
| 連續漏極電流 (ID) | 0.3 A |
| 脈衝漏極電流 (IDM) | 1.2 A |
| 功耗 (PD) | 0.36 W |
| 導通電阻 RDS(on) @ VGS=10V, ID=0.5A | 5 Ω (最大值) |
| 閾值電壓 (Vth) | 0.8 至 2.5 V |
| 輸入電容 (Ciss) | 50 pF (典型值) |
| 工作溫度範圍 | -55 至 +150 °C |
| 封裝 | SOT-23 |
在 Jasin Chip,我們為 SN700071N 提供全面的供應鏈與批發解決方案。 我們的核心優勢包括:
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