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Product Overview
The SN74CBTLV3251DR from Texas Instruments is a high-speed 1-of-8 FET multiplexer/demultiplexer with a low on-state resistance of typically 5 Ω. It operates from a 2.3 V to 3.6 V supply, making it ideal for low-voltage applications. The device features a 1x8:1 configuration, allowing one common input/output to be connected to one of eight channels. It is designed for bidirectional data flow with minimal propagation delay, supporting high-speed signal switching in digital systems.
Detailed Technical Specifications
| Parameter |
Value |
| Configuration |
1x8:1 |
| Supply Voltage (VCC) |
2.3 V to 3.6 V |
| On-State Resistance (RON) |
5 Ω (typical) |
| Bandwidth |
200 MHz |
| Propagation Delay |
0.25 ns (typical) |
| Operating Temperature |
-40°C to +85°C |
| Package |
16-SOIC |
| ESD Protection |
2 kV HBM |
Key Features
- Low on-state resistance (5 Ω typical) for minimal signal distortion
- High bandwidth (200 MHz) suitable for high-speed data switching
- Low power consumption with ICC of 10 μA (max)
- Bidirectional data flow with near-zero propagation delay
- Supports hot insertion with power-up 3-state
- Compatible with TTL and CMOS logic levels
Target Applications
- 5G base station: Signal routing in beamforming modules
- Automotive dashboard: Multiplexing sensor inputs in infotainment systems
- Data communication: Switching in routers and switches
- Industrial control: I/O expansion for PLCs
- Test equipment: Signal selection in automated test systems
Global Supply Chain & Wholesale Solutions
At Jasin Chip, we provide professional supply chain and wholesale solutions for
SN74CBTLV3251DR. Our core advantages include:
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be authentic with strict quality control.
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environmental and safety standards.
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Original Factory Packaging: We maintain original factory packaging
and seals to ensure ESD protection and physical integrity.
產品概述
SN74CBTLV3251DR 是德州儀器(TI)的一款高速 1-of-8 FET 多路復用器/解復用器,典型導通電阻僅 5 Ω。它工作在 2.3 V 至 3.6 V 電源下,非常適合低電壓應用。該器件採用 1x8:1 配置,允許一個公共輸入/輸出連接到八個通道中的一個。它支持雙向數據流,傳播延遲極小,適用於數字系統中的高速信號切換。
詳細技術參數
| 參數 |
數值 |
| 配置 |
1x8:1 |
| 電源電壓 (VCC) |
2.3 V 至 3.6 V |
| 導通電阻 (RON) |
5 Ω(典型值) |
| 帶寬 |
200 MHz |
| 傳播延遲 |
0.25 ns(典型值) |
| 工作溫度 |
-40°C 至 +85°C |
| 封裝 |
16-SOIC |
| ESD 保護 |
2 kV HBM |
核心特性
- 低導通電阻(典型 5 Ω),信號失真小
- 高帶寬(200 MHz),適合高速數據切換
- 低功耗,ICC 最大 10 μA
- 雙向數據流,傳播延遲接近零
- 支持熱插拔,上電三態
- 兼容 TTL 和 CMOS 邏輯電平
典型應用場景
- 5G 基站:波束成形模塊中的信號路由
- 汽車儀表板:信息娛樂系統中的傳感器輸入多路復用
- 數據通信:路由器與交換機中的切換
- 工業控制:PLC 的 I/O 擴展
- 測試設備:自動測試系統中的信號選擇
環球供應鏈與批發合作夥伴方案
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