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Product Overview
The Infineon 1ED21271S65FXUMA1 is a single-channel isolated gate driver IC designed for driving IGBTs and MOSFETs in high-power applications. It features a 2.5A peak sink and source current capability, with a 5.7kV RMS isolation voltage. The device is housed in a PG-DSO-8 package, offering a compact solution for industrial and automotive systems.
Detailed Technical Specifications
| Parameter |
Value |
| Peak Output Current (Sink/Source) |
2.5A / 2.5A |
| Isolation Voltage |
5.7kV RMS |
| Supply Voltage (VCC2) |
10V - 20V |
| Input Threshold |
CMOS/TTL compatible |
| Propagation Delay |
50ns (typ) |
| Operating Temperature |
-40°C to +125°C |
| Package |
PG-DSO-8 |
Key Features
- 2.5A peak sink/source current
- 5.7kV RMS galvanic isolation
- Short propagation delay (50ns typ)
- Active Miller clamp
- Under-voltage lockout (UVLO)
- CMOS/TTL compatible inputs
- Wide operating temperature range
Target Applications
- Industrial motor drives (e.g., Siemens G120)
- Solar inverters (e.g., SMA Sunny Boy)
- Uninterruptible power supplies (UPS) (e.g., APC Smart-UPS)
- EV charging stations (e.g., ABB Terra)
- 5G base station power supplies (e.g., Nokia AirScale)
- Automotive traction inverters (e.g., Tesla Model 3)
Global Supply Chain & Wholesale Solutions
At Jasin Chip, we provide professional supply chain and wholesale solutions for
1ED21271S65FXUMA1. Our core advantages include:
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24/7 Global Customer Support: Professional team providing instant
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orders confirmed before 4 PM are shipped the same day.
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transactions, ensuring peace of mind for batch orders.
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testing samples and urgent shortage components.
Quality Assurance & Compliance
Jasin Chip guarantees that all delivered products are 100% original factory stock
with full quality assurance and traceability.
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be authentic with strict quality control.
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environmental and safety standards.
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Original Factory Packaging: We maintain original factory packaging
and seals to ensure ESD protection and physical integrity.
產品概述
英飛凌1ED21271S65FXUMA1是一款單通道隔離式柵極驅動器IC,專為驅動高功率應用中的IGBT和MOSFET而設計。它具有2.5A峰值灌電流和拉電流能力,隔離電壓為5.7kV RMS。該器件採用PG-DSO-8封裝,為工業和汽車系統提供緊湊的解決方案。
詳細技術參數
| 參數 |
數值 |
| 峰值輸出電流(灌/拉) |
2.5A / 2.5A |
| 隔離電壓 |
5.7kV RMS |
| 電源電壓(VCC2) |
10V - 20V |
| 輸入閾值 |
CMOS/TTL兼容 |
| 傳播延遲 |
50ns(典型值) |
| 工作溫度 |
-40°C 至 +125°C |
| 封裝 |
PG-DSO-8 |
核心特性
- 2.5A峰值灌/拉電流
- 5.7kV RMS 隔離
- 短傳播延遲(典型50ns)
- 有源米勒鉗位
- 欠壓鎖定(UVLO)
- CMOS/TTL兼容輸入
- 寬工作溫度範圍
典型應用場景
- 工業電機驅動(例如西門子G120)
- 太陽能逆變器(例如SMA Sunny Boy)
- 不間斷電源(UPS)(例如APC Smart-UPS)
- 電動汽車充電樁(例如ABB Terra)
- 5G基站電源(例如諾基亞AirScale)
- 汽車牽引逆變器(例如特斯拉Model 3)
環球供應鏈與批發合作夥伴方案
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