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The Infineon 1ED21471S65FXUMA1 is a single-channel isolated gate driver IC designed for driving IGBTs and MOSFETs in high-power applications. It features a 4A peak sink and 8A peak source current capability, with a 5.7kVrms reinforced isolation rating. Housed in a compact PG-DSO-8 package, it offers robust performance for industrial and automotive systems.
| Parameter | Value |
|---|---|
| Supply Voltage (VCC2) | 13V to 20V |
| Peak Output Current (Source/Sink) | 8A / 4A |
| Isolation Voltage | 5.7kVrms (reinforced) |
| Propagation Delay | 50ns (typical) |
| Operating Temperature | -40°C to +125°C |
| Package | PG-DSO-8 |
This gate driver is ideal for use in 5G base station power supplies, electric vehicle (EV) onboard chargers, solar inverters, industrial motor drives, and server power units. Specific examples include driving IGBT modules in 5G base station rectifiers, SiC MOSFETs in EV traction inverters, and high-voltage DC-DC converters in telecom infrastructure.
At Jasin Chip, we provide professional supply chain and wholesale solutions for 1ED21471S65FXUMA1. Our core advantages include:
Jasin Chip guarantees that all delivered products are 100% original factory stock with full quality assurance and traceability.
英飛凌1ED21471S65FXUMA1是一款單通道隔離式柵極驅動器IC,專為驅動高功率應用中的IGBT和MOSFET而設計。它具有4A峰值灌電流和8A峰值拉電流能力,並提供5.7kVrms增強隔離等級。採用緊湊的PG-DSO-8封裝,為工業和汽車系統提供穩健性能。
| 參數 | 數值 |
|---|---|
| 電源電壓 (VCC2) | 13V 至 20V |
| 峰值輸出電流 (源/灌) | 8A / 4A |
| 隔離電壓 | 5.7kVrms (增強型) |
| 傳播延遲 | 50ns (典型值) |
| 工作溫度 | -40°C 至 +125°C |
| 封裝 | PG-DSO-8 |
該柵極驅動器非常適用於5G基站電源、電動汽車車載充電器、太陽能逆變器、工業電機驅動和服務器電源單元。具體示例包括驅動5G基站整流器中的IGBT模塊、電動汽車牽引逆變器中的SiC MOSFET,以及電信基礎設施中的高壓DC-DC轉換器。
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HONG KONG JASIN SEMICONDUCTOR TECHNOLOGY COMPANY LIMITED
Trusted Partner for Automotive, Industrial, and Hard-to-find Components.
WhatsApp: +852 5209 9691 | Email: [email protected]
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