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The 2ED2103S06FXUMA1 is a high-voltage, high-speed power MOSFET and IGBT gate driver from Infineon Technologies, designed for half-bridge and full-bridge configurations. It features a floating high-side driver capable of operating up to 600V, with a typical source/sink current of 0.7A. The device is housed in a compact PG-DSO-8-69 package, making it suitable for space-constrained applications. It integrates bootstrap diode and UVLO protection for both high and low side, ensuring reliable operation in harsh environments.
| Parameter | Value |
|---|---|
| Supply Voltage (VCC) | 10V - 20V |
| High-Side Floating Supply Voltage | Up to 600V |
| Output Current (Source/Sink) | 0.7A / 0.7A |
| Propagation Delay | 160 ns (typ) |
| Rise/Fall Time | 50 ns / 30 ns (typ) |
| Operating Temperature | -40°C to +125°C |
| Package | PG-DSO-8-69 |
At Jasin Chip, we provide professional supply chain and wholesale solutions for 2ED2103S06FXUMA1. Our core advantages include:
Jasin Chip guarantees that all delivered products are 100% original factory stock with full quality assurance and traceability.
2ED2103S06FXUMA1 是英飛凌科技推出的一款高壓、高速功率 MOSFET 和 IGBT 柵極驅動器,專為半橋和全橋配置設計。它具有高達 600V 的浮動高端驅動能力,典型源/灌電流為 0.7A。器件採用緊湊的 PG-DSO-8-69 封裝,適合空間受限的應用。集成了自舉二極管和高低側欠壓鎖定保護,確保在惡劣環境下可靠運行。
| 參數 | 數值 |
|---|---|
| 電源電壓 (VCC) | 10V - 20V |
| 高端浮動電源電壓 | 最高 600V |
| 輸出電流 (源/灌) | 0.7A / 0.7A |
| 傳播延遲 | 160 ns (典型) |
| 上升/下降時間 | 50 ns / 30 ns (典型) |
| 工作溫度 | -40°C 至 +125°C |
| 封裝 | PG-DSO-8-69 |
在 Jasin Chip,我們為 2ED2103S06FXUMA1 提供全面的供應鏈與批發解決方案。 我們的核心優勢包括:
Jasin Chip 承諾所有出貨產品均為原廠正貨,具備完善的品質保證及產品可追溯性。
以上產品均為原廠正貨,提供 BOM 配單及現貨庫存支援,歡迎查詢。
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Our team provides competitive wholesale pricing for 2ED2103S06FXUMA1.
HONG KONG JASIN SEMICONDUCTOR TECHNOLOGY COMPANY LIMITED
Trusted Partner for Automotive, Industrial, and Hard-to-find Components.
WhatsApp: +852 5209 9691 | Email: [email protected]
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