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Product Overview
The Infineon 2EDL8123G3CXTMA1 is a high-voltage, high-speed power MOSFET and IGBT gate driver with integrated bootstrap diode. It is designed for driving N-channel MOSFETs in half-bridge configurations. The device features a 120V bootstrap voltage rating and 5A peak sink/source current capability, making it suitable for a wide range of power conversion applications. Housed in a compact PG-VSON-10-4 package, it offers excellent thermal performance and space savings.
Detailed Technical Specifications
| Parameter |
Value |
| Supply Voltage (VCC) |
10V - 20V |
| Bootstrap Voltage (VB) |
Up to 120V |
| Peak Output Current (Sink/Source) |
5A / 5A |
| Propagation Delay (Typ.) |
50 ns |
| Operating Temperature |
-40°C to 125°C |
| Package |
PG-VSON-10-4 |
Key Features
- Integrated bootstrap diode
- High peak output current: 5A sink/source
- Fast propagation delay: 50 ns typical
- Wide supply voltage range: 10V to 20V
- Bootstrap voltage up to 120V
- Under-voltage lockout (UVLO) for VCC and VB
- Shoot-through prevention
- RoHS compliant
Target Applications
- 5G base station power supplies
- Server and telecom power converters
- Industrial motor drives
- Automotive DC-DC converters
- Solar inverters
- LED lighting drivers
Global Supply Chain & Wholesale Solutions
At Jasin Chip, we provide professional supply chain and wholesale solutions for
2EDL8123G3CXTMA1. Our core advantages include:
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24/7 Global Customer Support: Professional team providing instant
quotes and technical support worldwide.
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In-stock Inventory, Same-day Shipping: We maintain localized stock;
orders confirmed before 4 PM are shipped the same day.
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Shenzhen with support for HK bank transfers and multi-currency.
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transactions, ensuring peace of mind for batch orders.
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BOM Kitting & Sampling Services: Specialized sourcing for
testing samples and urgent shortage components.
Quality Assurance & Compliance
Jasin Chip guarantees that all delivered products are 100% original factory stock
with full quality assurance and traceability.
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100% Original & Authentic: All components are guaranteed to
be authentic with strict quality control.
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RoHS Compliant: All electronic components comply with international
environmental and safety standards.
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Original Factory Packaging: We maintain original factory packaging
and seals to ensure ESD protection and physical integrity.
產品概述
英飛凌2EDL8123G3CXTMA1是一款高壓、高速功率MOSFET和IGBT柵極驅動器,內置自舉二極管。它專為驅動半橋配置中的N溝道MOSFET而設計。該器件具有120V自舉電壓額定值和5A峰值灌/拉電流能力,適用於各種電源轉換應用。採用緊湊的PG-VSON-10-4封裝,提供出色的熱性能和節省空間。
詳細技術參數
| 參數 |
數值 |
| 電源電壓 (VCC) |
10V - 20V |
| 自舉電壓 (VB) |
高達120V |
| 峰值輸出電流 (灌/拉) |
5A / 5A |
| 傳播延遲 (典型值) |
50 ns |
| 工作溫度 |
-40°C 至 125°C |
| 封裝 |
PG-VSON-10-4 |
核心特性
- 集成自舉二極管
- 高峰值輸出電流:5A 灌/拉
- 快速傳播延遲:典型50 ns
- 寬電源電壓範圍:10V 至 20V
- 自舉電壓高達120V
- VCC和VB欠壓鎖定 (UVLO)
- 防止直通
- 符合RoHS標準
典型應用場景
- 5G基站電源
- 服務器和電信電源轉換器
- 工業電機驅動
- 汽車DC-DC轉換器
- 太陽能逆變器
- LED照明驅動器
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