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全球優質電子元件供應商
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全球優質電子元件供應商
The CY7C1041G-10VXIT is a high-performance 4-Mbit (256K x 16) Static Random Access Memory (SRAM) device from Infineon Technologies. It operates with a single 5V power supply and features a fast access time of 10 ns. The device is organized as 262,144 words by 16 bits, making it ideal for applications requiring high-speed data storage and retrieval. It is offered in a 44-pin SOJ (Small Outline J-Lead) package, which is suitable for surface-mount assembly. The CY7C1041G-10VXIT is designed for industrial temperature range (-40°C to +85°C) and is RoHS compliant.
| Parameter | Value |
|---|---|
| Memory Size | 4 Mbit (256K x 16) |
| Access Time | 10 ns |
| Supply Voltage | 5V ± 10% |
| Operating Temperature | -40°C to +85°C |
| Package | 44-SOJ |
| Interface | Parallel |
| Standby Current | 10 mA (max) |
| Operating Current | 100 mA (max at 10 ns cycle) |
| Output Enable Access Time | 5 ns |
| RoHS | Compliant |
At Jasin Chip, we provide professional supply chain and wholesale solutions for CY7C1041G-10VXIT. Our core advantages include:
Jasin Chip guarantees that all delivered products are 100% original factory stock with full quality assurance and traceability.
CY7C1041G-10VXIT 是英飛凌科技推出的一款高性能 4-Mbit(256K x 16)靜態隨機存取存儲器(SRAM)器件。它採用單一 5V 電源供電,具有 10 ns 的快速訪問時間。該器件組織為 262,144 字 × 16 位,非常適合需要高速數據存儲和檢索的應用。它採用 44 引腳 SOJ(小外形 J 引線)封裝,適用於表面貼裝組裝。CY7C1041G-10VXIT 設計用於工業溫度範圍(-40°C 至 +85°C),並符合 RoHS 標準。
| 參數 | 數值 |
|---|---|
| 存儲容量 | 4 Mbit(256K x 16) |
| 訪問時間 | 10 ns |
| 電源電壓 | 5V ± 10% |
| 工作溫度 | -40°C 至 +85°C |
| 封裝 | 44-SOJ |
| 接口 | 並行 |
| 待機電流 | 10 mA(最大) |
| 工作電流 | 100 mA(最大,10 ns 週期) |
| 輸出使能訪問時間 | 5 ns |
| RoHS | 符合 |
在 Jasin Chip,我們為 CY7C1041G-10VXIT 提供全面的供應鏈與批發解決方案。 我們的核心優勢包括:
Jasin Chip 承諾所有出貨產品均為原廠正貨,具備完善的品質保證及產品可追溯性。
以上產品均為原廠正貨,提供 BOM 配單及現貨庫存支援,歡迎查詢。
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Our team provides competitive wholesale pricing for CY7C1041G-10VXIT.
HONG KONG JASIN SEMICONDUCTOR TECHNOLOGY COMPANY LIMITED
Trusted Partner for Automotive, Industrial, and Hard-to-find Components.
WhatsApp: +852 5209 9691 | Email: [email protected]
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