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The FM24CL64B-DG is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories. Unlike EEPROM, the FM24CL64B-DG performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately and automatically power is restored in the event of a power loss. The next bus cycle can commence immediately without the need for data polling. In addition, the product offers substantial write endurance compared with EEPROM. The FM24CL64B-DG is capable of supporting 10^13 read/write cycles, or 10 million times more write cycles than EEPROM. These capabilities make the FM24CL64B-DG ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data logging, where the write count may be high, to demanding industrial controls where the long write time of EEPROM can cause data loss. The FM24CL64B-DG is available in an 8-pin DFN package (4x4.5 mm) and is specified over the industrial temperature range (-40°C to +85°C).
| Parameter | Value |
|---|---|
| Density | 64 Kbit (8K x 8) |
| Interface | I2C (up to 1 MHz) |
| Operating Voltage | 2.7V to 3.6V |
| Operating Temperature | -40°C to +85°C |
| Write Endurance | 10^13 cycles |
| Data Retention | 151 years at +85°C |
| Package | 8-DFN (4x4.5 mm) |
| RoHS | Yes |
At Jasin Chip, we provide professional supply chain and wholesale solutions for FM24CL64B-DG. Our core advantages include:
Jasin Chip guarantees that all delivered products are 100% original factory stock with full quality assurance and traceability.
FM24CL64B-DG 是一款採用先進鐵電工藝的 64Kb 非易失性存儲器。鐵電隨機存取存儲器(FRAM)既具有非易失性,又能像 RAM 一樣進行讀寫操作。它提供 151 年的可靠數據保持能力,同時消除了 EEPROM 和其他非易失性存儲器帶來的複雜性、開銷和系統級可靠性問題。與 EEPROM 不同,FM24CL64B-DG 以總線速度執行寫操作,無寫入延遲。數據在斷電時會立即自動寫入存儲陣列並恢復電源。下一個總線週期可以立即開始,無需數據輪詢。此外,該產品相比 EEPROM 具有顯著的寫入耐久性。FM24CL64B-DG 支持 10^13 次讀寫循環,比 EEPROM 多 1000 萬倍。這些特性使 FM24CL64B-DG 非常適合需要頻繁或快速寫入的非易失性存儲應用,例如數據記錄(寫入次數可能很高)以及要求苛刻的工業控制(EEPROM 的長寫入時間可能導致數據丟失)。FM24CL64B-DG 採用 8 引腳 DFN 封裝(4x4.5 mm),並在工業溫度範圍(-40°C 至 +85°C)內指定。
| 參數 | 數值 |
|---|---|
| 密度 | 64 Kbit (8K x 8) |
| 接口 | I2C (最高 1 MHz) |
| 工作電壓 | 2.7V 至 3.6V |
| 工作溫度 | -40°C 至 +85°C |
| 寫入耐久性 | 10^13 次循環 |
| 數據保持 | +85°C 下 151 年 |
| 封裝 | 8-DFN (4x4.5 mm) |
| RoHS | 是 |
在 Jasin Chip,我們為 FM24CL64B-DG 提供全面的供應鏈與批發解決方案。 我們的核心優勢包括:
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以上產品均為原廠正貨,提供 BOM 配單及現貨庫存支援,歡迎查詢。
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Our team provides competitive wholesale pricing for FM24CL64B-DG.
HONG KONG JASIN SEMICONDUCTOR TECHNOLOGY COMPANY LIMITED
Trusted Partner for Automotive, Industrial, and Hard-to-find Components.
WhatsApp: +852 5209 9691 | Email: [email protected]
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