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FM25V02A-DGQ Infineon FRAM | 8-DFN (4x4.5) | 256Kbit, SPI Interface

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产品描述
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Product Overview

The FM25V02A-DGQ is a 256-Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories. Unlike EEPROM, the FM25V02A-DGQ performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is transferred to the device. The next bus cycle can commence immediately without requiring data polling. In addition, the product offers substantial write endurance compared with EEPROM. F-RAM offers 10^14 read/write cycles, which is 10 million times more endurance than EEPROM. The FM25V02A-DGQ operates over a voltage range of 2.0V to 3.6V. It is available in an 8-pin DFN package (4x4.5mm).

Detailed Technical Specifications

Parameter Value
Density 256 Kbit (32K x 8)
Interface SPI (Serial Peripheral Interface)
Operating Voltage 2.0V to 3.6V
Operating Temperature -40°C to +85°C
Data Retention 151 years at +85°C
Endurance 10^14 read/write cycles
Write Speed Bus speed (no write delay)
Package 8-DFN (4x4.5mm)
RoHS Compliant

Key Features

  • 256 Kbit ferroelectric nonvolatile RAM
  • SPI interface with up to 20 MHz clock frequency
  • No write delay: writes at bus speed
  • High endurance: 10^14 read/write cycles
  • Low power consumption: 300 µA active current at 1 MHz
  • Low-voltage operation: 2.0V to 3.6V
  • Industrial temperature range: -40°C to +85°C
  • 8-pin DFN package (4x4.5mm) for space-constrained designs

Target Applications

  • Industrial control systems: PLCs, motor drives, and robotics requiring frequent data logging
  • 5G base stations: Configuration storage and parameter tracking
  • Automotive: Dashboard data recorders, event data recorders (EDR), and infotainment systems
  • Smart meters: Energy consumption data storage with high endurance
  • Medical devices: Patient monitoring systems and portable diagnostic equipment
  • IoT edge devices: Sensor data buffering and firmware parameter storage

Global Supply Chain & Wholesale Solutions

At Jasin Chip, we provide professional supply chain and wholesale solutions for FM25V02A-DGQ. Our core advantages include:

  • 24/7 Global Customer Support: Professional team providing instant quotes and technical support worldwide.
  • In-stock Inventory, Same-day Shipping: We maintain localized stock; orders confirmed before 4 PM are shipped the same day.
  • HK-SZ Synergy, Flexible Settlement: Direct global shipping from Shenzhen with support for HK bank transfers and multi-currency.
  • Escrow Secured Transactions: We support Escrow.com for secure transactions, ensuring peace of mind for batch orders.
  • BOM Kitting & Sampling Services: Specialized sourcing for testing samples and urgent shortage components.

Quality Assurance & Compliance

Jasin Chip guarantees that all delivered products are 100% original factory stock with full quality assurance and traceability.

  • 100% Original & Authentic: All components are guaranteed to be authentic with strict quality control.
  • RoHS Compliant: All electronic components comply with international environmental and safety standards.
  • Original Factory Packaging: We maintain original factory packaging and seals to ensure ESD protection and physical integrity.

產品概述

FM25V02A-DGQ 是一款採用先進鐵電工藝的 256-Kbit 非易失性存儲器。鐵電隨機存取存儲器 (F-RAM) 是非易失性的,其讀寫操作類似於 RAM。它提供 151 年的可靠數據保持,同時消除了由 EEPROM 和其他非易失性存儲器引起的複雜性、開銷和系統級可靠性問題。與 EEPROM 不同,FM25V02A-DGQ 以總線速度執行寫操作,無寫入延遲。數據在每個字節傳輸到設備後立即寫入存儲陣列,下一個總線週期可以立即開始,無需數據輪詢。此外,該產品相比 EEPROM 具有顯著的寫入耐久性。F-RAM 提供 10^14 次讀/寫週期,是 EEPROM 耐久性的 1000 萬倍。FM25V02A-DGQ 的工作電壓範圍為 2.0V 至 3.6V,採用 8 引腳 DFN 封裝(4x4.5mm)。

詳細技術參數

參數 數值
密度 256 Kbit (32K x 8)
接口 SPI(串行外設接口)
工作電壓 2.0V 至 3.6V
工作溫度 -40°C 至 +85°C
數據保持 在 +85°C 下 151 年
耐久性 10^14 次讀/寫週期
寫入速度 總線速度(無寫入延遲)
封裝 8-DFN (4x4.5mm)
RoHS 符合

核心特性

  • 256 Kbit 鐵電非易失性 RAM
  • SPI 接口,最高 20 MHz 時鐘頻率
  • 無寫入延遲:以總線速度寫入
  • 高耐久性:10^14 次讀/寫週期
  • 低功耗:1 MHz 時工作電流 300 µA
  • 低電壓工作:2.0V 至 3.6V
  • 工業溫度範圍:-40°C 至 +85°C
  • 8 引腳 DFN 封裝(4x4.5mm),適用於空間受限的設計

典型應用場景

  • 工業控制系統:PLC、電機驅動和機器人,需要頻繁數據記錄
  • 5G 基站:配置存儲和參數跟踪
  • 汽車:儀表板數據記錄器、事件數據記錄器 (EDR) 和信息娛樂系統
  • 智能電表:高耐久性能量消耗數據存儲
  • 醫療設備:患者監護系統和便攜式診斷設備
  • 物聯網邊緣設備:傳感器數據緩衝和固件參數存儲

環球供應鏈與批發合作夥伴方案

在 Jasin Chip,我們為 FM25V02A-DGQ 提供全面的供應鏈與批發解決方案。 我們的核心優勢包括:

  • 全天候環球客戶支援:專業團隊為您提供即時報價及技術支援,無需漫長等待。
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HONG KONG JASIN SEMICONDUCTOR TECHNOLOGY COMPANY LIMITED
Trusted Partner for Automotive, Industrial, and Hard-to-find Components.
WhatsApp: +852 5209 9691 | Email: [email protected]

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