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全球優質電子元件供應商
推動全球創新
全球優質電子元件供應商
The ICE3RBR0665JZXKLA1 is a high-voltage power MOSFET from Infineon's CoolMOS CE series, designed for efficient power conversion. It features a 650V drain-source breakdown voltage and a low on-resistance of 0.65Ω (typical), enabling high efficiency in switching applications. The device is housed in a PG-DIP-7-1 package, suitable for through-hole mounting, and offers excellent thermal performance.
| Parameter | Value |
|---|---|
| Drain-Source Voltage (VDS) | 650 V |
| On-Resistance (RDS(on)) | 0.65 Ω (typ.) |
| Continuous Drain Current (ID) | 6 A (at Tc=25°C) |
| Gate Threshold Voltage (VGS(th)) | 3.5 V (typ.) |
| Package | PG-DIP-7-1 |
| Technology | CoolMOS CE |
At Jasin Chip, we provide professional supply chain and wholesale solutions for ICE3RBR0665JZXKLA1. Our core advantages include:
Jasin Chip guarantees that all delivered products are 100% original factory stock with full quality assurance and traceability.
ICE3RBR0665JZXKLA1 是英飛凌 CoolMOS CE 系列的高壓功率 MOSFET,專為高效電源轉換設計。它具有 650V 的漏源擊穿電壓和 0.65Ω(典型值)的低導通電阻,可在開關應用中實現高效率。該器件採用 PG-DIP-7-1 封裝,適合通孔安裝,並提供出色的熱性能。
| 參數 | 數值 |
|---|---|
| 漏源電壓 (VDS) | 650 V |
| 導通電阻 (RDS(on)) | 0.65 Ω(典型值) |
| 連續漏極電流 (ID) | 6 A(Tc=25°C 時) |
| 柵極閾值電壓 (VGS(th)) | 3.5 V(典型值) |
| 封裝 | PG-DIP-7-1 |
| 技術 | CoolMOS CE |
在 Jasin Chip,我們為 ICE3RBR0665JZXKLA1 提供全面的供應鏈與批發解決方案。 我們的核心優勢包括:
Jasin Chip 承諾所有出貨產品均為原廠正貨,具備完善的品質保證及產品可追溯性。
以上產品均為原廠正貨,提供 BOM 配單及現貨庫存支援,歡迎查詢。
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Our team provides competitive wholesale pricing for ICE3RBR0665JZXKLA1.
HONG KONG JASIN SEMICONDUCTOR TECHNOLOGY COMPANY LIMITED
Trusted Partner for Automotive, Industrial, and Hard-to-find Components.
WhatsApp: +852 5209 9691 | Email: [email protected]
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