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The S29GL512S10TFI010 is a high-performance 512Mb (64M x 8/32M x 16) NOR Flash memory device from Infineon, designed for reliable non-volatile storage in demanding applications. Housed in a 56-pin TSOP package, it operates at a supply voltage of 2.7V to 3.6V and features a fast access time of 100ns. This device supports both parallel and page mode read operations, making it ideal for code shadowing, data storage, and firmware updates in embedded systems.
| Parameter | Value |
|---|---|
| Density | 512 Mb (64 M x 8 / 32 M x 16) |
| Supply Voltage | 2.7V – 3.6V |
| Access Time | 100 ns |
| Page Read Access | 25 ns |
| Program Time (typical) | 0.7 ms/word |
| Erase Time (sector) | 0.5 s typical |
| Endurance | 100,000 program/erase cycles |
| Data Retention | 20 years |
| Operating Temperature | -40°C to +85°C |
| Package | 56-TSOP (14x20mm) |
| Interface | Parallel (x8/x16) |
At Jasin Chip, we provide professional supply chain and wholesale solutions for S29GL512S10TFI010. Our core advantages include:
Jasin Chip guarantees that all delivered products are 100% original factory stock with full quality assurance and traceability.
S29GL512S10TFI010 是英飛凌推出的一款高性能 512Mb(64M x 8 / 32M x 16)NOR Flash 存儲器件,專為要求苛刻的非易失性存儲應用而設計。採用 56 引腳 TSOP 封裝,工作電壓範圍為 2.7V 至 3.6V,訪問時間快至 100ns。該器件支持並行和頁面模式讀取操作,非常適合嵌入式系統中的代碼映射、數據存儲和固件更新。
| 參數 | 數值 |
|---|---|
| 密度 | 512 Mb(64 M x 8 / 32 M x 16) |
| 供電電壓 | 2.7V – 3.6V |
| 訪問時間 | 100 ns |
| 頁面讀取訪問 | 25 ns |
| 編程時間(典型) | 0.7 ms/字 |
| 擦除時間(扇區) | 0.5 s 典型 |
| 耐久性 | 100,000 次編程/擦除循環 |
| 數據保持 | 20 年 |
| 工作溫度 | -40°C 至 +85°C |
| 封裝 | 56-TSOP(14x20mm) |
| 接口 | 並行(x8/x16) |
在 Jasin Chip,我們為 S29GL512S10TFI010 提供全面的供應鏈與批發解決方案。 我們的核心優勢包括:
Jasin Chip 承諾所有出貨產品均為原廠正貨,具備完善的品質保證及產品可追溯性。
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Our team provides competitive wholesale pricing for S29GL512S10TFI010.
HONG KONG JASIN SEMICONDUCTOR TECHNOLOGY COMPANY LIMITED
Trusted Partner for Automotive, Industrial, and Hard-to-find Components.
WhatsApp: +852 5209 9691 | Email: [email protected]
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