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Product Overview
The GANSPIN612TR from STMicroelectronics is a high-performance 650V enhancement-mode Gallium Nitride (GaN) power transistor. Housed in a compact 35-QFN (9x9) package, it offers ultra-low on-resistance (150mOhm typical) and high switching frequency capability, enabling efficient power conversion in demanding applications. This device leverages ST's advanced GaN technology to deliver superior figure of merit (RDS(on)*Qg) compared to traditional silicon MOSFETs.
Detailed Technical Specifications
| Parameter |
Value |
| Drain-Source Voltage (VDS) |
650V |
| On-Resistance (RDS(on)) |
150mOhm (typical) |
| Gate Threshold Voltage (VGS(th)) |
1.4V (typical) |
| Continuous Drain Current (ID) |
15A (at 25°C) |
| Pulsed Drain Current (IDM) |
45A |
| Total Gate Charge (Qg) |
6.5nC (typical) |
| Output Capacitance (Coss) |
65pF (typical) |
| Switching Frequency |
Up to 2MHz |
| Operating Junction Temperature |
-55°C to +150°C |
| Package |
35-QFN (9x9) |
Key Features
- 650V breakdown voltage with low RDS(on) for high efficiency
- Enhanced-mode GaN technology for normally-off operation
- Ultra-low gate charge and output capacitance for high-speed switching
- Zero reverse recovery loss (no body diode)
- Compact 35-QFN package with excellent thermal performance
- RoHS compliant and halogen-free
Target Applications
- 5G base station power supplies (e.g., rectifier modules for Ericsson or Huawei base stations)
- Server and telecom power converters (e.g., 48V to 12V DC-DC for data centers)
- Automotive on-board chargers (e.g., 3.3kW OBC for electric vehicles)
- Industrial motor drives (e.g., servo drives for CNC machines)
- High-efficiency LED lighting (e.g., 200W street light drivers)
- Wireless charging systems (e.g., 15W Qi-compatible chargers)
Global Supply Chain & Wholesale Solutions
At Jasin Chip, we provide professional supply chain and wholesale solutions for
GANSPIN612TR. Our core advantages include:
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24/7 Global Customer Support: Professional team providing instant
quotes and technical support worldwide.
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In-stock Inventory, Same-day Shipping: We maintain localized stock;
orders confirmed before 4 PM are shipped the same day.
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HK-SZ Synergy, Flexible Settlement: Direct global shipping from
Shenzhen with support for HK bank transfers and multi-currency.
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Escrow Secured Transactions: We support Escrow.com for secure
transactions, ensuring peace of mind for batch orders.
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BOM Kitting & Sampling Services: Specialized sourcing for
testing samples and urgent shortage components.
Quality Assurance & Compliance
Jasin Chip guarantees that all delivered products are 100% original factory stock
with full quality assurance and traceability.
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100% Original & Authentic: All components are guaranteed to
be authentic with strict quality control.
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RoHS Compliant: All electronic components comply with international
environmental and safety standards.
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Original Factory Packaging: We maintain original factory packaging
and seals to ensure ESD protection and physical integrity.
產品概述
GANSPIN612TR 是意法半導體(STMicroelectronics)推出的一款高性能 650V 增強型氮化鎵(GaN)功率晶體管。採用緊湊的 35-QFN(9x9)封裝,具有超低導通電阻(典型值 150mOhm)和高開關頻率能力,可在苛刻應用中實現高效電能轉換。該器件利用 ST 先進的 GaN 技術,相比傳統矽 MOSFET 具有更優異的品質因數(RDS(on)*Qg)。
詳細技術參數
| 參數 |
數值 |
| 漏源電壓(VDS) |
650V |
| 導通電阻(RDS(on)) |
150mOhm(典型值) |
| 閾值電壓(VGS(th)) |
1.4V(典型值) |
| 連續漏極電流(ID) |
15A(25°C 時) |
| 脈衝漏極電流(IDM) |
45A |
| 總柵電荷(Qg) |
6.5nC(典型值) |
| 輸出電容(Coss) |
65pF(典型值) |
| 開關頻率 |
最高 2MHz |
| 工作結溫 |
-55°C 至 +150°C |
| 封裝 |
35-QFN(9x9) |
核心特性
- 650V 擊穿電壓,低 RDS(on) 實現高效率
- 增強型 GaN 技術,常關操作
- 超低柵電荷和輸出電容,支持高速開關
- 零反向恢復損耗(無體二極管)
- 緊湊 35-QFN 封裝,優良熱性能
- 符合 RoHS 標準,無鹵素
典型應用場景
- 5G 基站電源(例如華為或愛立信基站的整流模塊)
- 服務器和電信電源轉換器(例如數據中心 48V 轉 12V DC-DC)
- 車載充電器(例如電動汽車 3.3kW OBC)
- 工業電機驅動(例如數控機床伺服驅動)
- 高效 LED 照明(例如 200W 路燈驅動器)
- 無線充電系統(例如 15W Qi 兼容充電器)
環球供應鏈與批發合作夥伴方案
在 Jasin Chip,我們為 GANSPIN612TR 提供全面的供應鏈與批發解決方案。
我們的核心優勢包括:
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