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Product Overview
The LMG3422R030RQZT is a 650V, 30mΩ gallium nitride (GaN) field-effect transistor (FET) with integrated driver and protection, from Texas Instruments. Housed in a compact 54-pin VQFN (12x12) package, it enables high-frequency, high-efficiency power conversion in a small footprint. The device integrates a gate driver, bootstrap diode, and advanced protection features, simplifying design and reducing component count.
Detailed Technical Specifications
| Parameter |
Value |
| Drain-Source Voltage (VDS) |
650 V |
| Typical On-Resistance (RDS(on)) |
30 mΩ |
| Continuous Drain Current (ID) |
10 A (at TC = 25°C) |
| Pulsed Drain Current (IDM) |
20 A |
| Gate-Source Voltage (VGS) |
-10 to 10 V |
| Switching Frequency |
Up to 2 MHz |
| Operating Junction Temperature |
-40°C to +150°C |
| Package |
54-VQFN (12x12) |
Key Features
- Integrated gate driver with bootstrap diode
- Zero reverse recovery (QRR = 0)
- Low switching losses with fast slew rate
- Overcurrent, overtemperature, and undervoltage lockout protection
- 5V/9V compatible logic input
- Small 12x12 mm QFN package
Target Applications
- 5G base station power supplies (e.g., rectifiers for remote radio units)
- AC/DC adapters for laptops and gaming consoles
- On-board chargers for electric vehicles (EVs)
- Server and telecom power converters
- Industrial motor drives (e.g., servo drives for robotics)
Global Supply Chain & Wholesale Solutions
At Jasin Chip, we provide professional supply chain and wholesale solutions for
LMG3422R030RQZT. Our core advantages include:
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with full quality assurance and traceability.
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be authentic with strict quality control.
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environmental and safety standards.
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Original Factory Packaging: We maintain original factory packaging
and seals to ensure ESD protection and physical integrity.
產品概述
LMG3422R030RQZT 是德州儀器(TI)推出的一款 650V、30mΩ 氮化鎵(GaN)場效應晶體管(FET),集成驅動器和保護功能,採用緊湊的 54 引腳 VQFN(12x12)封裝。該器件可在小尺寸內實現高頻、高效率的電源轉換,集成柵極驅動器、自舉二極管和高級保護功能,簡化設計並減少元件數量。
詳細技術參數
| 參數 |
數值 |
| 漏源電壓(VDS) |
650 V |
| 典型導通電阻(RDS(on)) |
30 mΩ |
| 連續漏極電流(ID) |
10 A(TC = 25°C 時) |
| 脈衝漏極電流(IDM) |
20 A |
| 柵源電壓(VGS) |
-10 至 10 V |
| 開關頻率 |
最高 2 MHz |
| 工作結溫 |
-40°C 至 +150°C |
| 封裝 |
54-VQFN(12x12) |
核心特性
- 集成柵極驅動器和自舉二極管
- 零反向恢復(QRR = 0)
- 低開關損耗,快速壓擺率
- 過流、過溫和欠壓鎖定保護
- 5V/9V 兼容邏輯輸入
- 小型 12x12 mm QFN 封裝
典型應用場景
- 5G 基站電源(例如,遠程射頻單元的整流器)
- 筆記本電腦和遊戲機的 AC/DC 適配器
- 電動汽車(EV)車載充電器
- 服務器和電信電源轉換器
- 工業電機驅動(例如,機器人伺服驅動器)
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