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Product Overview
The LMG3422R050RQZR is a 650V, 50mΩ gallium nitride (GaN) field-effect transistor (FET) from Texas Instruments, designed for high-efficiency power conversion. It integrates a GaN power stage with a gate driver and protection features in a compact 54-VQFN (12x12) package. This device enables high-frequency operation, reducing magnetics size and improving power density in applications such as AC/DC adapters, server power supplies, and renewable energy inverters.
Detailed Technical Specifications
| Parameter |
Value |
| Drain-Source Voltage (Vds) |
650 V |
| On-Resistance (Rds(on)) |
50 mΩ (typical) |
| Continuous Drain Current (Id) |
10 A (at 25°C) |
| Pulsed Drain Current (Idm) |
20 A |
| Gate Threshold Voltage (Vgs(th)) |
1.2 V (typical) |
| Switching Frequency |
Up to 1 MHz |
| Operating Temperature Range |
-40°C to +125°C |
| Package |
54-VQFN (12x12) |
Key Features
- 650V GaN FET with integrated gate driver and protection
- 50 mΩ typical on-resistance for low conduction losses
- High-frequency operation up to 1 MHz reduces magnetics size
- Zero reverse recovery loss for improved efficiency
- Overcurrent, overtemperature, and undervoltage lockout protection
- Compact 54-VQFN (12x12) package for space-constrained designs
Target Applications
- AC/DC adapters and chargers (e.g., 65W USB-C PD adapters)
- Server power supplies (e.g., 48V to 12V intermediate bus converters)
- Telecom rectifiers (e.g., 5G base station power modules)
- Solar microinverters and energy storage systems
- Industrial motor drives and robotics
Global Supply Chain & Wholesale Solutions
At Jasin Chip, we provide professional supply chain and wholesale solutions for
LMG3422R050RQZR. Our core advantages include:
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with full quality assurance and traceability.
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environmental and safety standards.
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Original Factory Packaging: We maintain original factory packaging
and seals to ensure ESD protection and physical integrity.
產品概述
LMG3422R050RQZR 是德州儀器(TI)推出的一款 650V、50mΩ 氮化鎵(GaN)場效應晶體管(FET),集成了 GaN 功率級、柵極驅動器和保護功能,採用緊湊的 54-VQFN(12x12)封裝。該器件支持高頻操作,減小磁性元件尺寸,提高功率密度,適用於 AC/DC 適配器、服務器電源和可再生能源逆變器等應用。
詳細技術參數
| 參數 |
數值 |
| 漏源電壓(Vds) |
650 V |
| 導通電阻(Rds(on)) |
50 mΩ(典型值) |
| 連續漏極電流(Id) |
10 A(25°C 時) |
| 脈衝漏極電流(Idm) |
20 A |
| 柵極閾值電壓(Vgs(th)) |
1.2 V(典型值) |
| 開關頻率 |
最高 1 MHz |
| 工作溫度範圍 |
-40°C 至 +125°C |
| 封裝 |
54-VQFN(12x12) |
核心特性
- 650V GaN FET,集成柵極驅動器和保護功能
- 典型導通電阻 50 mΩ,降低導通損耗
- 高頻操作最高 1 MHz,減小磁性元件尺寸
- 零反向恢復損耗,提高效率
- 過流、過溫和欠壓鎖定保護
- 緊湊的 54-VQFN(12x12)封裝,節省空間
典型應用場景
- AC/DC 適配器和充電器(例如 65W USB-C PD 適配器)
- 服務器電源(例如 48V 至 12V 中間總線轉換器)
- 電信整流器(例如 5G 基站電源模塊)
- 太陽能微型逆變器和儲能系統
- 工業電機驅動和機器人
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