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Product Overview
The LMG3526R050RQSR is a 650V, 50mOhm gallium nitride (GaN) field-effect transistor (FET) from Texas Instruments, designed for high-frequency and high-efficiency power conversion. Housed in a compact 52-pin VQFN package (12x12 mm), it integrates a gate driver and protection features, enabling simplified design and reduced component count. This device targets applications requiring high power density and fast switching, such as AC/DC converters, DC/DC converters, and inverters.
Detailed Technical Specifications
| Parameter |
Value |
| Drain-Source Voltage (Vds) |
650 V |
| Typical On-Resistance (Rds(on)) |
50 mOhm |
| Continuous Drain Current (Id) |
30 A |
| Pulsed Drain Current (Idm) |
60 A |
| Gate Threshold Voltage (Vgs(th)) |
1.7 V |
| Input Capacitance (Ciss) |
800 pF |
| Output Capacitance (Coss) |
150 pF |
| Reverse Transfer Capacitance (Crss) |
10 pF |
| Switching Frequency |
Up to 2 MHz |
| Operating Junction Temperature |
-40°C to +150°C |
| Package |
52-VQFN (12x12 mm) |
Key Features
- 650V GaN FET with integrated gate driver and protection
- Low on-resistance (50 mOhm) for high efficiency
- High switching frequency capability (up to 2 MHz) enabling smaller magnetics
- Zero reverse recovery loss due to GaN technology
- Overcurrent, overtemperature, and undervoltage lockout protection
- Compact 52-VQFN package for high power density
Target Applications
- 5G base station power supplies (e.g., rectifiers for remote radio units)
- Server and telecom AC/DC converters (e.g., 48V bus converters)
- Industrial power inverters (e.g., motor drives for factory automation)
- Automotive on-board chargers (e.g., 3.3 kW to 6.6 kW OBC)
- Solar microinverters and energy storage systems
Global Supply Chain & Wholesale Solutions
At Jasin Chip, we provide professional supply chain and wholesale solutions for
LMG3526R050RQSR. Our core advantages include:
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24/7 Global Customer Support: Professional team providing instant
quotes and technical support worldwide.
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orders confirmed before 4 PM are shipped the same day.
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Shenzhen with support for HK bank transfers and multi-currency.
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transactions, ensuring peace of mind for batch orders.
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BOM Kitting & Sampling Services: Specialized sourcing for
testing samples and urgent shortage components.
Quality Assurance & Compliance
Jasin Chip guarantees that all delivered products are 100% original factory stock
with full quality assurance and traceability.
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be authentic with strict quality control.
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environmental and safety standards.
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Original Factory Packaging: We maintain original factory packaging
and seals to ensure ESD protection and physical integrity.
產品概述
LMG3526R050RQSR 是德州儀器(TI)推出的一款 650V、50mOhm 氮化鎵(GaN)場效應晶體管(FET),專為高頻、高效率電源轉換設計。採用緊湊的 52 引腳 VQFN 封裝(12x12 mm),集成了柵極驅動器和保護功能,簡化設計並減少元件數量。該器件適用於需要高功率密度和快速開關的應用,如 AC/DC 轉換器、DC/DC 轉換器和逆變器。
詳細技術參數
| 參數 |
數值 |
| 漏源電壓 (Vds) |
650 V |
| 典型導通電阻 (Rds(on)) |
50 mOhm |
| 連續漏極電流 (Id) |
30 A |
| 脈衝漏極電流 (Idm) |
60 A |
| 柵極閾值電壓 (Vgs(th)) |
1.7 V |
| 輸入電容 (Ciss) |
800 pF |
| 輸出電容 (Coss) |
150 pF |
| 反向傳輸電容 (Crss) |
10 pF |
| 開關頻率 |
最高 2 MHz |
| 工作結溫 |
-40°C 至 +150°C |
| 封裝 |
52-VQFN (12x12 mm) |
核心特性
- 650V GaN FET,集成柵極驅動器和保護功能
- 低導通電阻(50 mOhm),實現高效率
- 高開關頻率能力(最高 2 MHz),可縮小磁性元件
- GaN 技術實現零反向恢復損耗
- 過流、過溫和欠壓鎖定保護
- 緊湊的 52-VQFN 封裝,實現高功率密度
典型應用場景
- 5G 基站電源(例如遠程射頻單元的整流器)
- 服務器和電信 AC/DC 轉換器(例如 48V 總線轉換器)
- 工業電源逆變器(例如工廠自動化的電機驅動)
- 車載充電器(例如 3.3 kW 至 6.6 kW OBC)
- 太陽能微型逆變器和儲能系統
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