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Product Overview
The LMG3624YREQR is a high-performance 650V GaN FET from Texas Instruments, designed for high-efficiency power conversion. It integrates a GaN power FET with a gate driver and protection features in a compact 38-VQFN (8x5.3) package. This device offers ultra-low on-resistance (150mΩ typical) and fast switching speeds, enabling significant reductions in power losses and system size.
Detailed Technical Specifications
| Parameter |
Value |
| Drain-Source Voltage (VDS) |
650 V |
| On-Resistance (RDS(on)) |
150 mΩ (typical) |
| Continuous Drain Current (ID) |
10 A (at TC=25°C) |
| Pulsed Drain Current (IDM) |
20 A |
| Gate Threshold Voltage (VGS(th)) |
1.7 V (typical) |
| Switching Frequency |
Up to 2 MHz |
| Operating Junction Temperature |
-40°C to +150°C |
| Package |
38-VQFN (8x5.3 mm) |
Key Features
- 650V GaN FET with integrated gate driver
- Ultra-low on-resistance (150 mΩ) for high efficiency
- Fast switching speeds (up to 2 MHz) reducing magnetics size
- Integrated overcurrent and overtemperature protection
- Zero reverse recovery loss
- Low gate charge and output capacitance
- Compact 38-VQFN package for space-constrained designs
Target Applications
- 5G base station power supplies (e.g., rectifiers for remote radio units)
- AC-DC adapters and chargers for laptops and smartphones
- Server and telecom power supplies (e.g., 48V bus converters)
- Industrial power supplies (e.g., motor drives, welding equipment)
- Automotive on-board chargers (OBC) and DC-DC converters
- LED lighting drivers
Global Supply Chain & Wholesale Solutions
At Jasin Chip, we provide professional supply chain and wholesale solutions for
LMG3624YREQR. Our core advantages include:
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24/7 Global Customer Support: Professional team providing instant
quotes and technical support worldwide.
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In-stock Inventory, Same-day Shipping: We maintain localized stock;
orders confirmed before 4 PM are shipped the same day.
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HK-SZ Synergy, Flexible Settlement: Direct global shipping from
Shenzhen with support for HK bank transfers and multi-currency.
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Escrow Secured Transactions: We support Escrow.com for secure
transactions, ensuring peace of mind for batch orders.
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BOM Kitting & Sampling Services: Specialized sourcing for
testing samples and urgent shortage components.
Quality Assurance & Compliance
Jasin Chip guarantees that all delivered products are 100% original factory stock
with full quality assurance and traceability.
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100% Original & Authentic: All components are guaranteed to
be authentic with strict quality control.
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RoHS Compliant: All electronic components comply with international
environmental and safety standards.
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Original Factory Packaging: We maintain original factory packaging
and seals to ensure ESD protection and physical integrity.
產品概述
LMG3624YREQR 是德州儀器(TI)推出的一款高性能 650V GaN FET,專為高效率電源轉換設計。它將 GaN 功率 FET 與柵極驅動器和保護功能集成在緊湊的 38-VQFN(8x5.3)封裝中。該器件具有超低導通電阻(典型值 150mΩ)和快速開關速度,可顯著降低功率損耗和系統尺寸。
詳細技術參數
| 參數 |
數值 |
| 漏源電壓 (VDS) |
650 V |
| 導通電阻 (RDS(on)) |
150 mΩ(典型值) |
| 連續漏極電流 (ID) |
10 A(TC=25°C 時) |
| 脈衝漏極電流 (IDM) |
20 A |
| 柵極閾值電壓 (VGS(th)) |
1.7 V(典型值) |
| 開關頻率 |
最高 2 MHz |
| 工作結溫 |
-40°C 至 +150°C |
| 封裝 |
38-VQFN(8x5.3 mm) |
核心特性
- 650V GaN FET,集成柵極驅動器
- 超低導通電阻(150 mΩ),實現高效率
- 快速開關速度(最高 2 MHz),減小磁性元件尺寸
- 集成過流和過溫保護
- 零反向恢復損耗
- 低柵極電荷和輸出電容
- 緊湊的 38-VQFN 封裝,適合空間受限的設計
典型應用場景
- 5G 基站電源(例如,遠程射頻單元的整流器)
- 筆記本電腦和智能手機的 AC-DC 適配器和充電器
- 服務器和電信電源(例如,48V 總線轉換器)
- 工業電源(例如,電機驅動、焊接設備)
- 車載充電器(OBC)和 DC-DC 轉換器
- LED 照明驅動器
環球供應鏈與批發合作夥伴方案
在 Jasin Chip,我們為 LMG3624YREQR 提供全面的供應鏈與批發解決方案。
我們的核心優勢包括:
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全天候環球客戶支援:專業團隊為您提供即時報價及技術支援,無需漫長等待。
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Jasin Chip 承諾所有出貨產品均為原廠正貨,具備完善的品質保證及產品可追溯性。
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