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全球優質電子元件供應商
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全球優質電子元件供應商
The SN700080N is a high-performance N-channel MOSFET from Texas Instruments, designed for efficient power management in a wide range of applications. With a drain-source voltage (VDS) of 60V and continuous drain current (ID) of 0.8A, this device offers low on-resistance (RDS(on)) and fast switching characteristics. It is housed in a compact SOT-23 package, making it suitable for space-constrained designs.
| Parameter | Value |
|---|---|
| Drain-Source Voltage (VDS) | 60V |
| Continuous Drain Current (ID) | 0.8A |
| On-Resistance (RDS(on)) | 1.2Ω (max) @ VGS=10V |
| Gate Threshold Voltage (VGS(th)) | 1.0V to 2.5V |
| Total Gate Charge (Qg) | 2.5nC (typ) |
| Input Capacitance (Ciss) | 50pF (typ) |
| Output Capacitance (Coss) | 15pF (typ) |
| Reverse Transfer Capacitance (Crss) | 5pF (typ) |
| Operating Junction Temperature | -55°C to +150°C |
| Package | SOT-23 |
At Jasin Chip, we provide professional supply chain and wholesale solutions for SN700080N. Our core advantages include:
Jasin Chip guarantees that all delivered products are 100% original factory stock with full quality assurance and traceability.
SN700080N 是德州儀器(TI)推出的一款高性能 N 溝道 MOSFET,適用於多種電源管理應用。其漏源電壓(VDS)為 60V,連續漏極電流(ID)為 0.8A,具有低導通電阻(RDS(on))和快速開關特性。器件採用緊湊的 SOT-23 封裝,適合空間受限的設計。
| 參數 | 數值 |
|---|---|
| 漏源電壓(VDS) | 60V |
| 連續漏極電流(ID) | 0.8A |
| 導通電阻(RDS(on)) | 1.2Ω(最大值)@ VGS=10V |
| 柵極閾值電壓(VGS(th)) | 1.0V 至 2.5V |
| 總柵極電荷(Qg) | 2.5nC(典型值) |
| 輸入電容(Ciss) | 50pF(典型值) |
| 輸出電容(Coss) | 15pF(典型值) |
| 反向傳輸電容(Crss) | 5pF(典型值) |
| 工作結溫 | -55°C 至 +150°C |
| 封裝 | SOT-23 |
在 Jasin Chip,我們為 SN700080N 提供全面的供應鏈與批發解決方案。 我們的核心優勢包括:
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Our team provides competitive wholesale pricing for SN700080N.
HONG KONG JASIN SEMICONDUCTOR TECHNOLOGY COMPANY LIMITED
Trusted Partner for Automotive, Industrial, and Hard-to-find Components.
WhatsApp: +852 5209 9691 | Email: [email protected]
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