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The SN700082N is a high-performance N-channel enhancement mode field-effect transistor (MOSFET) manufactured by Texas Instruments (TI). It is designed for low-power switching and amplification applications, offering a compact solution with excellent efficiency. The device features a drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 0.3A, making it suitable for a wide range of electronic circuits. Its small package and low threshold voltage enable easy integration into space-constrained designs.
| Parameter | Value |
|---|---|
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) | 0.3 A |
| Gate-Source Voltage (VGS) | ±20 V |
| Power Dissipation (PD) | 0.36 W |
| Drain-Source On-Resistance (RDS(on)) | 5 Ω (max) @ VGS=10V |
| Gate Threshold Voltage (VGS(th)) | 0.8 V to 2.5 V |
| Input Capacitance (Ciss) | 50 pF (typ) |
| Operating Temperature Range | -55°C to +150°C |
| Package | SOT-23 |
At Jasin Chip, we provide professional supply chain and wholesale solutions for SN700082N. Our core advantages include:
Jasin Chip guarantees that all delivered products are 100% original factory stock with full quality assurance and traceability.
SN700082N 是一款由德州儀器 (TI) 生產的高性能 N 溝道增強型場效應晶體管 (MOSFET)。它專為低功耗開關和放大應用而設計,提供緊湊的解決方案和卓越的效率。該器件具有 60V 的漏源電壓 (VDS) 和 0.3A 的連續漏極電流 (ID),適用於各種電子電路。其小型封裝和低閾值電壓使其易於集成到空間受限的設計中。
| 參數 | 數值 |
|---|---|
| 漏源電壓 (VDS) | 60 V |
| 連續漏極電流 (ID) | 0.3 A |
| 柵源電壓 (VGS) | ±20 V |
| 功耗 (PD) | 0.36 W |
| 漏源導通電阻 (RDS(on)) | 5 Ω (最大值) @ VGS=10V |
| 柵極閾值電壓 (VGS(th)) | 0.8 V 至 2.5 V |
| 輸入電容 (Ciss) | 50 pF (典型值) |
| 工作溫度範圍 | -55°C 至 +150°C |
| 封裝 | SOT-23 |
在 Jasin Chip,我們為 SN700082N 提供全面的供應鏈與批發解決方案。 我們的核心優勢包括:
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HONG KONG JASIN SEMICONDUCTOR TECHNOLOGY COMPANY LIMITED
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