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Product Overview
The SN74AHC367DR from Texas Instruments is a high-speed, non-inverting octal buffer and line driver designed for 2-V to 5.5-V VCC operation. It features 3-state outputs and is fabricated using advanced CMOS technology to achieve high noise immunity and low power consumption. The device is ideal for driving bus lines or buffer memory address registers. It is available in a 16-pin SOIC package (DR suffix).
Detailed Technical Specifications
| Parameter |
Value |
| Supply Voltage (VCC) |
2 V to 5.5 V |
| Input Voltage (VI) |
0 V to 5.5 V |
| Output Voltage (VO) |
0 V to VCC |
| High-Level Output Current (IOH) |
-8 mA at VCC = 4.5 V |
| Low-Level Output Current (IOL) |
8 mA at VCC = 4.5 V |
| Propagation Delay (tpd) |
6.5 ns max at VCC = 5 V, CL = 50 pF |
| Input Capacitance (CI) |
4 pF typical |
| Power Dissipation (PD) |
500 mW |
| Operating Temperature |
-40°C to +125°C |
| Package |
16-SOIC |
Key Features
- Wide operating voltage range: 2 V to 5.5 V
- 3-state outputs for bus-oriented applications
- High noise immunity: VNIH = VNIL = 28% of VCC
- Low power consumption: 10-μA max ICC
- ±8-mA output drive at 5 V
- Latch-up performance exceeds 250 mA per JESD 17
- ESD protection exceeds JESD 22 (2000-V Human-Body Model, 1000-V Charged-Device Model)
Target Applications
- 5G base station control logic
- Automotive dashboard display drivers
- Industrial PLC I/O modules
- Data communication buffers (e.g., RS-232 transceivers)
- Memory address drivers in embedded systems
Global Supply Chain & Wholesale Solutions
At Jasin Chip, we provide professional supply chain and wholesale solutions for
SN74AHC367DR. Our core advantages include:
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Jasin Chip guarantees that all delivered products are 100% original factory stock
with full quality assurance and traceability.
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be authentic with strict quality control.
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environmental and safety standards.
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Original Factory Packaging: We maintain original factory packaging
and seals to ensure ESD protection and physical integrity.
產品概述
SN74AHC367DR 是德州儀器(TI)的一款高速非反相八路緩衝器和線路驅動器,工作電壓範圍為 2 V 至 5.5 V。它採用先進的 CMOS 技術製造,具有高噪聲抗擾度和低功耗特性。該器件非常適合驅動總線或緩衝存儲器地址寄存器。封裝形式為 16 引腳 SOIC(DR 後綴)。
詳細技術參數
| 參數 |
數值 |
| 電源電壓 (VCC) |
2 V 至 5.5 V |
| 輸入電壓 (VI) |
0 V 至 5.5 V |
| 輸出電壓 (VO) |
0 V 至 VCC |
| 高電平輸出電流 (IOH) |
-8 mA (VCC = 4.5 V 時) |
| 低電平輸出電流 (IOL) |
8 mA (VCC = 4.5 V 時) |
| 傳播延遲 (tpd) |
6.5 ns 最大值 (VCC = 5 V, CL = 50 pF) |
| 輸入電容 (CI) |
4 pF 典型值 |
| 功耗 (PD) |
500 mW |
| 工作溫度 |
-40°C 至 +125°C |
| 封裝 |
16-SOIC |
核心特性
- 寬工作電壓範圍:2 V 至 5.5 V
- 三態輸出,適用於總線應用
- 高噪聲抗擾度:VNIH = VNIL = 28% VCC
- 低功耗:最大 ICC 為 10 μA
- 5 V 時 ±8 mA 輸出驅動能力
- 閂鎖性能超過 250 mA,符合 JESD 17 標準
- ESD 保護超過 JESD 22(人體放電模型 2000 V,充電器件模型 1000 V)
典型應用場景
- 5G 基站控制邏輯
- 汽車儀表盤顯示驅動
- 工業 PLC I/O 模塊
- 數據通信緩衝(如 RS-232 收發器)
- 嵌入式系統中的存儲器地址驅動
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