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Product Overview
The UCC57132BDR from Texas Instruments is a single-channel, low-side gate driver designed for driving MOSFETs and IGBTs. It features a 4A peak source and sink current capability, making it suitable for high-frequency power conversion applications. The device operates over a wide supply voltage range from 4.5V to 18V and includes an enable function for power sequencing. Housed in an 8-SOIC package, it offers a compact solution for space-constrained designs.
Detailed Technical Specifications
| Parameter |
Value |
| Peak Source/Sink Current |
4A / 4A |
| Supply Voltage Range |
4.5V to 18V |
| UVLO Threshold (VDD) |
4.3V (rising), 4.0V (falling) |
| Propagation Delay |
17 ns (typical) |
| Rise/Fall Time |
9 ns / 7 ns (typical, 1nF load) |
| Operating Temperature |
-40°C to +125°C |
| Package |
8-SOIC |
Key Features
- 4A peak drive current for fast switching
- Enable pin for power sequencing and fault handling
- Under-voltage lockout (UVLO) for reliable startup
- Wide supply voltage range compatible with various logic levels
- Low propagation delay and fast rise/fall times
- Operating junction temperature up to 125°C
Target Applications
- Switching power supplies (e.g., AC-DC adapters, server PSUs)
- DC-DC converters (e.g., POL modules, telecom bricks)
- Motor drives (e.g., BLDC controllers, industrial inverters)
- 5G base station power modules
- Automotive systems (e.g., infotainment, dashboard power supplies)
Global Supply Chain & Wholesale Solutions
At Jasin Chip, we provide professional supply chain and wholesale solutions for
UCC57132BDR. Our core advantages include:
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24/7 Global Customer Support: Professional team providing instant
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orders confirmed before 4 PM are shipped the same day.
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testing samples and urgent shortage components.
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with full quality assurance and traceability.
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be authentic with strict quality control.
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environmental and safety standards.
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Original Factory Packaging: We maintain original factory packaging
and seals to ensure ESD protection and physical integrity.
產品概述
UCC57132BDR 是德州儀器(TI)推出的單通道低側柵極驅動器,專為驅動 MOSFET 和 IGBT 設計。其峰值源電流和灌電流能力均為 4A,適用於高頻電源轉換應用。器件工作電壓範圍為 4.5V 至 18V,並包含使能功能以實現電源時序控制。採用 8-SOIC 封裝,為空間受限的設計提供緊湊解決方案。
詳細技術參數
| 參數 |
數值 |
| 峰值源/灌電流 |
4A / 4A |
| 電源電壓範圍 |
4.5V 至 18V |
| 欠壓鎖定閾值 (VDD) |
4.3V (上升), 4.0V (下降) |
| 傳播延遲 |
17 ns (典型) |
| 上升/下降時間 |
9 ns / 7 ns (典型, 1nF 負載) |
| 工作溫度 |
-40°C 至 +125°C |
| 封裝 |
8-SOIC |
核心特性
- 4A 峰值驅動電流,實現快速開關
- 使能引腳,用於電源時序和故障處理
- 欠壓鎖定 (UVLO),確保可靠啟動
- 寬電源電壓範圍,兼容多種邏輯電平
- 低傳播延遲和快速上升/下降時間
- 工作結溫高達 125°C
典型應用場景
- 開關電源(例如 AC-DC 適配器、服務器電源)
- DC-DC 轉換器(例如 POL 模塊、電信磚塊)
- 電機驅動(例如 BLDC 控制器、工業逆變器)
- 5G 基站電源模塊
- 汽車系統(例如信息娛樂系統、儀表板電源)
環球供應鏈與批發合作夥伴方案
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